参数资料
| 型号： | BR93L56FVT-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 33/41页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 2KBIT 2MHZ 8TSSOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 2K (128 x 16) |
| 速度： | 2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP-B |
| 包装： | 标准包装 |
| 产品目录页面： | 1380 (CN2011-ZH PDF) |
| 其它名称： | BR93L56FVT-WE2DKR |
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BR93L -W Series, 93A □□ -WM Series, BR93H □□ -WC Series
○ READY / BUSY status display (DO terminal)
(common to BR93H56-WC, BR93H66-WC, BR93H76-WC, BR93H86-WC)
This display outputs the internal status signal. When CS is started after tCS (Min.200ns)
from CS fall after write command input, “H” or “L” output.
R/B display ＝ “L” (BUSY) = write under execution
Technical Note
（ DO status ）
After the timer circuit in the IC works and creates the period of tE/W, this time circuit completes automatically.
And write to the memory cell is made in the period of tE/W, and during this period, other command is not
accepted.
R/B display = “H” (READY) = command wait status
（ DO status ）
Even after tE/W (max.10ms) (Max.5ms:BR93H66RFVM-WC) from write of the memory cell, the following
command is accepted.
Therefore, CS=“H” in the period of tE/W, and when input is in SK, DI, malfunction may occur, therefore,
DI=“L” in the area
CS=“H”. (Especially, in the case of shared input port, attention is required.)
*Do not input any command while status signal is output. Command input in BUSY area is cancelled, but command input in READY area is accepted.
Therefore, status READY output is cancelled, and malfunction and mistake write may be made.
CS
SK
DI
CLOCK
WRITE
INSTRUCTION
STATUS
DO
High-Z
t SV
READY
BUSY
Fig.45 R/B status output timing chart
4) When to directly connect DI and DO
This IC has independent input terminal DI and output terminal DO, and separate signals are handled on timing chart,
meanwhile, by inserting a resistance R between these DI and DO terminals, it is possible to carry out control by 1 control line.
Microcontroller
EEPROM
DI/O PORT
DI
R
DO
Fig.46 DI, DO control line common connection
○ Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input.
Drive from the microcontroller DI/O output to DI input on I/O timing, and signal output from DO output occur at the
same time in the following points.
4-1) 1 clock cycle to take in A0 address data at read command
Dummy bit “0” is output to DO terminal.
→ When address data A0 = “1” input, through current route occurs.
EEPROM CS input
EEPROM SK input
“H”
EEPROM DI input
A1
A0
Collision of DI input and DO output
EEPROM DO output
Microcontroller DI/O port
High-Z
A1
A0
0
D15 D14 D13
High-Z
Microcontroller output
Microcontroller input
Fig.47 Collision timing at read data output at DI, DO direct connection
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
33/40
2011.09 - Rev.G
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BR93L56FV-W | 制造商:ROHM Semiconductor 功能描述:EEPROM,2kb,128Wx16b,Microwire Bus,SSOP8 |
| BR93L56FV-WE2 | 功能描述:电可擦除可编程只读存储器 SRL 128X16 BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR93L56F-W | 制造商:ROHM Semiconductor 功能描述:IC,Memory,EEPROM,Serial SOP8 128x16 SER |
| BR93L56F-WE2 | 功能描述:电可擦除可编程只读存储器 SRL 128X16 BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR93L56RF | 制造商:未知厂家 制造商全称:未知厂家 功能描述:EEPROM |
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