参数资料
| 型号： | BR93L66RFVM-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 16/41页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 4KBIT 2MHZ 8MSOP |
| 标准包装： | 2,500 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 4K (256 x 16) |
| 速度： | 2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-VSSOP，8-MSOP（0.110"，2.80mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 带卷 (TR) |
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BR93L -W Series, 93A □□ -WM Series, BR93H □□ -WC Series
3) Equivalent circuit
Technical Note
Output circuit
Input citcuit
RESET int.
OEint.
Fig.71 Output circuit (DO)
DO
CS
Fig.72 Input circuit (CS)
CSint.
Input circuit
CS int.
Input circuit
CS int.
DI
Fig.73 Input circuit (DI)
SK
Fig.74 Input circuit (SK)
4) I/O peripheral circuit
4-1) Pull down CS.
By making CS=“L” at power ON/OFF, mistake in operation and mistake write are prevented.
○ Pull down resistance Rpd of CS pin
To prevent mistake in operation and mistake write at power ON/OFF, CS pull down resistance is necessary. Select an
appropriate value to this resistance value from microcontroller VOH, IOH, and VIL characteristics of this IC.
Rpd ≧
VOHM
IOHM
???①
Microcontroller
EEPROM
VOHM ≧
VIHE
???②
Example) When V CC =5V, VIHE=2V, VOHM=2.4V, IOHM=2mA,
VOHM
VIHE
from the equation ① ,
2 × 10
“H” output
IOHM
Rpd
“L” input
Rpd ≧
2.4
-3
∴
Rpd ≧
1.2 [k Ω ]
With the value of Rpd to satisfy the above equation, VOHM becomes
2.4V or higher, and VIHE (=2.0V), the equation ② is also satisfied.
Fig.75 CS pull down resistance
? VIHE
: EEPROM VIH specifications
? VOHM : Microcontroller VOH specifications
? IOHM
: Microcontroller IOH specifications
4-2) DO is available in both pull up and pull down.
Do output become “High-Z” in other READY / BUSY output timing than after data output at read command and write
command. When malfunction occurs at “High-Z” input of the microcontroller port connected to DO, it is necessary to
pull down and pull up DO. When there is no influence upon the microcontroller actions, DO may be OPEN.
If DO is OPEN, and at timing to output status READY, at timing of CS=“H”, SK=“H”, DI=“H”, EEPROM recognizes this
as a start bit, resets READY output, and DO=”High-Z”, therefore, READY signal cannot be detected. To avoid such
output, pull up DO pin for improvement.
CS
SK
Enlarged
CS “H”
SK
DI
D0
DI
DO
High-Z
READY
DO BUSY
High-Z
CS=SK=DI=”H”
When DO=OPEN
BUSY
Improvement by DO pull up
DO
BUSY
READY
CS=SK=DI=”H”
When DO=pull up
Fig.76 READY output timing at DO=OPEN
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
16/40
2011.09 - Rev.G
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BR93L66RFVM-WTR | 功能描述:电可擦除可编程只读存储器 SRL 256X16 BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR93L66RFVT-W | 制造商:ROHM Semiconductor 功能描述:Memory,EEPROM,4kb(X16),Microwire,TSSOP8 |
| BR93L66RFVT-WE2 | 功能描述:电可擦除可编程只读存储器 MICROWIRE 4K BIT 256X16 2.5V/3.3V/5V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR93L66RFV-W | 制造商:ROHM 制造商全称:Rohm 功能描述:Microwire BUS 4Kbit(256 x 16bit) EEPROM |
| BR93L66RFV-WE2 | 功能描述:电可擦除可编程只读存储器 SRL 256X16 BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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