参数资料
| 型号： | BR93L66RFVM-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 32/41页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 4KBIT 2MHZ 8MSOP |
| 标准包装： | 2,500 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 4K (256 x 16) |
| 速度： | 2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-VSSOP，8-MSOP（0.110"，2.80mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 带卷 (TR) |
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BR93L -W Series, 93A □□ -WM Series, BR93H □□ -WC Series
Technical Note
3-2) DO is available in both pull up and pull down.
Do output become “High-Z” in other READY / BUSY output timing than after data output at read command and write
command. When malfunction occurs at “High-Z” input of the microcontroller port connected to DO, it is necessary to
pull down and pull up DO. When there is no influence upon the microcontroller actions, DO may be OPEN. If DO is
OPEN, and at timing to output status READY, at timing of CS=“H”, SK=“H”, DI=“H”, EEPROM recognizes thisas a
start bit, resets READY output, and DO=”High-Z”, therefore, READY signal cannot be detected. To avoid such output,
pull up DO pin for improvement.
CS
SK
Enlarged
CS “H”
SK
DI
D0
DI
DO
High-Z
READY
DO BUSY
High-Z
CS=SK=DI=”H”
When DO=OPEN
BUSY
Improvement by DO pull up
DO
BUSY
READY
CS=SK=DI=”H”
When DO=pull up
Fig.42 READY output timing at DO=OPEN
○ Pull up resistance Rpu and pull down resistance Rpd of DO pin
As for pull up and pull down resistance value, select an appropriate value to this resistance value from microcontroller
VIH, VIL, and VOH, IOH, VOL, IOL characteristics of this IC.
Rpu ≧
V cc － VOLE
IOLE
???③
Microcontroller
EEPROM
VOLE ≦
VILM
???④
2.1 × 10
VILM
“L” input
Rpu
IOLE
VOLE
“L” output
Example) When V CC =5V , VOLE=0.4V, IOLE=2.1mA, VILM=0.8V,
from the equation ③ ,
5 － 0.4
Rpu ≧
-3
∴
Rpu ≧
2.2 [k Ω ]
? VOLE
? IOLE
? VILM
With the value of Rpu to satisfy the above equation, VOLE becomes 0.4V or
below, and with VILM(=0.8V), the equation ④ is also satisfied.
? VOLE : EEPROM VOL specifications
Fig.43 DO pull up resistance
? IOLE
? VILM
: EEPROM IOL specifications
: Microcontroller VIL specifications
Rpd ≧
VOHE
IOHE
???⑤
Microcontroller
EEPROM
VOHE ≧
VIHM
???⑥
VIHM
VOHE
Example) When V CC =5V , VOHE=Vcc － 0.2V, IOHE=0.1mA,
VIHM=Vcc × 0.7V from the equation ⑤
0.1 × 10
“H” input
Rpd
IOHE
“H” output
Rpd ≧
5 － 0.2
-3
∴
Rpd ≧
48 [k Ω ]
With the value of Rpd to satisfy the above equation, VOHE becomes 2.4V or
below, and with VIHM (=3.5V), the equation ⑥ is also satisfied.
Fig.44 DO pull down resistance
? VOHE : EEPROM VOH specifications
? IOHE
? VIHM
: EEPROM IOH specifications
: Microcontroller VIH specifications
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
32/40
2011.09 - Rev.G
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BR93L66RFVM-WTR | 功能描述:电可擦除可编程只读存储器 SRL 256X16 BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR93L66RFVT-W | 制造商:ROHM Semiconductor 功能描述:Memory,EEPROM,4kb(X16),Microwire,TSSOP8 |
| BR93L66RFVT-WE2 | 功能描述:电可擦除可编程只读存储器 MICROWIRE 4K BIT 256X16 2.5V/3.3V/5V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR93L66RFV-W | 制造商:ROHM 制造商全称:Rohm 功能描述:Microwire BUS 4Kbit(256 x 16bit) EEPROM |
| BR93L66RFV-WE2 | 功能描述:电可擦除可编程只读存储器 SRL 256X16 BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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