- 您现在的位置：买卖IC网 > PDF目录295169 > BSF030NE2LQ (INFINEON TECHNOLOGIES AG) 24 A, 25 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | BSF030NE2LQ |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | JFETs |
| 英文描述： | 24 A, 25 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | GREEN, METAL, WDSON-2 |
| 文件页数： | 6/13页 |
| 文件大小： | 1563K |
| 代理商： | BSF030NE2LQ |
OptiMOS Power-MOSFET
BSF030NE2LQ
Final Data Sheet
1
2.2, 2011-04-07
1
Description
OptiMOS25V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate and output charges together
with lowest on state resistance in small footprint packages make OptiMOS 25V
the best choice for the demanding requirements of voltage regulator solutions in
Servers, Datacom and Telecom applications. Super fast switching Control FETs
together with low EMI Sync FETs provide solutions that are easy to design in.
OptiMOS products are available in high performance packages to tackle your
most challenging applications giving full flexibility in optimizing space, efficiency
and cost. OptiMOS products are designed to meet and exceed the energy
efficiency and power density requirements of the sharpened next generation
voltage regulation standards in computing applications.
Features
Optimized for high performance buck converters
100% avalanche tested
Low parasitic inductance
Qualified according to JEDEC
1) for target applications
Low profile (<0.7 mm)
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Double-sided cooling
Compatible with DirectFET package SQ footprint and outline
100% Rg Tested
Applications
On board power for server
Power managment for high performance computing
Synchronous rectification
High power density point of load converters
1) J-STD20 and JESD22
Table 1
Key Performance Parameters
Parameter
Value
Unit
Related Links
V
DS
25
V
R
DS(on),max
3m
Ω
I
D
75
A
Q
OSS
13
nC
Q
g.typ
23
Type
Package
Marking
BSF030NE2LQ
MG-WDSON-2
03E2
相关PDF资料 |
PDF描述 |
|---|---|
| BSZ086P03NS3EG | 13.5 A, 30 V, 0.0134 ohm, P-CHANNEL, Si, POWER, MOSFET |
| BT485AKHJ170 | 640 X 480 PIXELS PALETTE-DAC DSPL CTLR, PQCC84 |
| BT485AKPJ135 | 640 X 480 PIXELS PALETTE-DAC DSPL CTLR, PQCC84 |
| BT68561AKPJ | 1 CHANNEL(S), 4M bps, MULTI PROTOCOL CONTROLLER, PQCC68 |
| BT68560AKPJ | 1 CHANNEL(S), 4M bps, MULTI PROTOCOL CONTROLLER, PQCC44 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BSF030NE2LQXT | 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 25V 24A WDSON-2 |
| BSF030NE2LQXUMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 24A 6-Pin WDSON 制造商:Infineon Technologies AG 功能描述:N-KANAL POWER MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:N-KANAL POWER MOS - Cut TR (SOS) 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 25V 24A WDSON-2 |
| BSF035NE2LQXUMA1 | 功能描述:MOSFET N-CH 25V 22A 2WDSON 制造商:infineon technologies 系列:OptiMOS?? 包装:带卷（TR） 零件状态:有效 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:标准 漏源极电压（Vdss）:25V 电流 - 连续漏极（Id）（25°C 时）:22A（Ta），69A（Tc） 不同?Id，Vgs 时的?Rds On（最大值）:3.5 毫欧 @ 30A， 10V 不同 Id 时的 Vgs（th）（最大值）:2V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:25nC @ 10V 不同 Vds 时的输入电容（Ciss）:1862pF @ 12V 功率 - 最大值:2.2W 工作温度:-40°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:3-WDSON 供应商器件封装:MG-WDSON-2，CanPAK M? 标准包装:5,000 |
| BSF045N03LQ3 G | 功能描述:MOSFET OptiMOS 3 PWR-MOSFET N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BSF045N03LQ3GXUMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 18A 6-Pin WDSON T/R 制造商:Infineon Technologies AG 功能描述:N-KANAL POWER MOS - Tape and Reel |
发布紧急采购，3分钟左右您将得到回复。