参数资料
型号: BSS8402DW-7
厂商: Diodes Inc
文件页数: 7/7页
文件大小: 0K
描述: MOSFET N+P 50,60V 130MA SC70-6
标准包装: 1
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V,50V
电流 - 连续漏极(Id) @ 25° C: 115mA,130mA
开态Rds(最大)@ Id, Vgs @ 25° C: 7.5 欧姆 @ 50mA,5V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
输入电容 (Ciss) @ Vds: 50pF @ 25V
功率 - 最大: 200mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: SOT-363
包装: 剪切带 (CT)
其它名称: BSS8402DWDICT
BSS8402DW
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
C2
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Z
G
C1
Y
C1
0.6
1.9
C2
0.65
Y
X
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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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Copyright ? 2014, Diodes Incorporated
www.diodes.com
BSS8402DW
Document number: DS30380 Rev. 21 - 2
7 of 7
www.diodes.com
February 2014
? Diodes Incorporated
相关PDF资料
PDF描述
BSS84DW-7 MOSFET DUAL P-CHAN -50V SC70-6
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BSS84TC MOSFET P-CHAN 50V SOT23-3
BSS84V-7 MOSFET P-CH DUAL SOT-563
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