参数资料
型号: BU9847GUL-WE2
厂商: Rohm Semiconductor
文件页数: 19/27页
文件大小: 0K
描述: IC EEPROM 4KBIT 2WIRE VCSP50L1
标准包装: 3,000
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 4K (512 x 8)
速度: 400kHz
接口: I²C,2 线串口
电源电压: 1.7 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 6-UFBGA,CSPBGA
供应商设备封装: VCSP50L1
包装: 带卷 (TR)
BU9847GUL-W (4Kbit)
Datasheet
In I C BUS, it is recommended that SDA port is of open drain input / output. However, when to use COMS input / output
● Cautions on microcontroller connection
Rs
2
of tri state to SDA port, insert a series resistance Rs between the pull up resistance R PU and the SDA terminal of
EEPROM. This controls over protection of SDA terminal against surge. Therefore, even when SDA port is open drain
input / output, Rs can be used.
ACK
SCL
R PU
R S
SDA
“H” output of
microcontroller
“L” output of EEPROM
Over current flows to SDA line by “H” output of
Microcontroller
EEPROM
microcontroller and “L” output of EEPROM.
Figure 45. I/O circuit diagram
Figure 46. Input / output collision timing
○ Maximum value of Rs
The maximum value of Rs is determined by the following relations.
(1) SDA rise time to be determined by the capacity (CBUS) of bus line of R PU and SDA should be tR or below.
And AC timing should be satisfied even when SDA rise time is late.
(2) The bus electric potential A to be determined by RPU and Rs at the moment when EEPROM outputs “L” to SDA bus
should sufficiently secure the input “L” level (V IL ) of microcontroller including recommended noise margin 0.1V CC .
V CC
R PU
A
(V CC -V OL )×R S
R PU +R S
+
V OL +0.1V CC ≤ V IL
R S
I OL
V OL
R S
V IL -V OL -0.1V CC
1.1V CC -V IL
×
R PU
Bus line
capacity CBUS
Exam ple) When V CC =3V, V IL =0.3V CC , V OL =0.4V, R PU =20k ? ,
V IL
Microcontroller
EEPROM
From (2)
R S
0.3×3-0.4-0.1×3
1.1×3-0.3×3
×
20×10 3
Figure 47. I/O circuit diagram
≤ 1.67 [ k ? ]
○ Minimum value of Rs
The minimum value of Rs is determined by over current at bus collision. When over current flows, noises in power source
line, and instantaneous power failure of power source may occur. When allowable over current is defined as I, the
following relation must be satisfied. Determine the allowable current in consideration of impedance of power source line
in set and so forth. Set the over current to EEPROM 10mA or below.
R PU
"L" output
V CC
R S
≦ I
R S
Over current I
∴ R S ≧
V CC
I
"H" output
Example) When Vcc =3V, I = 10mA,
Microcontroller
EEPROM
R S ≧
3
10×10
-3
Figure 48. I/O Circuit diagram
300 [Ω]
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
19/24
TSZ02201-0R2R0G100480-1-2
4.SEP.2012 Rev.001
相关PDF资料
PDF描述
BU9880GUL-WE2 IC EEPROM 64KBIT 2WIRE VCSP50L1
BU9882FV-WE2 IC EEPROM 2KBIT 400KHZ 14SSOP
BU9883FV-WE2 IC EEPROM 6KBIT 400KHZ SSOP16
BU9889GUL-WE2 IC EEPROM 8KBIT 2WIRE VCSP50L1
BU9891GUL-WE2 IC EEPROM 4KBIT VCSP T/R
相关代理商/技术参数
参数描述
BU98570CH-3BW 制造商:ROHM 制造商全称:Rohm 功能描述:65,536 Colors 98RGB x 70 STN LCD control driver
BU98582CH-3BW 制造商:ROHM 制造商全称:Rohm 功能描述:65,536 Colors 104RGB x 82 STN LCD control driver
BU98664CH-3BW 制造商:ROHM 制造商全称:Rohm 功能描述:65,536 Colors 132RGB x 164 STN LCD control driver
BU9873F-GTE2 功能描述:Real Time Clock (RTC) IC Clock/Calendar I2C, 2-Wire Serial 8-SOIC (0.173", 4.40mm Width) 制造商:rohm semiconductor 系列:- 包装:剪切带(CT) 零件状态:有效 类型:时钟/日历 特性:警报器,闰年 存储容量:- 时间格式:HH:MM:SS(12/24 小时) 日期格式:YY-MM-DD-dd 接口:I2C,2 线串口 电压 - 电源:1.8 V ~ 5.5 V 电压 - 电源,电池:- 电流 - 计时(最大):1μA ~ 1.35μA @ 3V ~ 5.5V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-SOIC(0.173",4.40mm 宽) 供应商器件封装:8-SOP 标准包装:1
BU9873FJ-GTE2 功能描述:Real Time Clock (RTC) IC Clock/Calendar I2C, 2-Wire Serial 8-SOIC (0.154", 3.90mm Width) 制造商:rohm semiconductor 系列:- 包装:剪切带(CT) 零件状态:有效 类型:时钟/日历 特性:警报器,闰年 存储容量:- 时间格式:HH:MM:SS(12/24 小时) 日期格式:YY-MM-DD-dd 接口:I2C,2 线串口 电压 - 电源:1.8 V ~ 5.5 V 电压 - 电源,电池:- 电流 - 计时(最大):1μA ~ 1.35μA @ 3V ~ 5.5V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商器件封装:* 标准包装:1