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参数资料
| 型号： | BU9880GUL-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 1/25页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 64KBIT 2WIRE VCSP50L1 |
| 标准包装： | 3,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 64K (8K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 6-UFBGA，CSPBGA |
| 供应商设备封装： | VCSP50L1 |
| 包装： | 带卷 (TR) |
Datasheet
Serial EEPROM Series Standard EEPROM
WLCSP EEPROM
BU9880GUL-W
(64Kbit)
● General Description
BU9880GUL-W is a serial EEPROM of I 2 C BUS interface method.
● Features
● Package W(Typ.) x D(Typ.) x H(Max.)
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Completely conforming to the world standard I 2 C BUS.
All controls available by 2 ports of serial clock (SCL) and
serial data (SDA)
Other devices than EEPROM can be connected to the same port,
saving microcontroller port.
1.7V to 5.5V single power source action most suitable for battery use.
FAST MODE 400kHz at 1.7V to 5.5V
Page write mode useful for initial value write at factory shipment.
Auto erase and auto end function at data rewrite.
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Low current consumption
At write operation (5.0V) : 0.5mA (Typ.)
At read operation (5.0V) : 0.2mA (Typ.)
At standby operation (5.0V) : 0.1μA (Typ.)
Write mistake prevention function
Write (write protect) function added
Write mistake prevention function at low voltage
Data rewrite up to 1,000,000 times
Data kept for 40 years
Noise filter built in SCL / SDA terminal
Shipment data all address FFh
VCSP50L1
1.98mm x 1.59mm x 0.55mm
● Page Write
Product number
BU9880GUL-W
Number of pages
32Byte
● Absolute Maximum Ratings (Ta=25 ℃ )
Parameter
Impressed voltage
Permissible dissipation
Storage temperature range
Action temperature range
Terminal voltage
symbol
V CC
Pd
Tstg
Topr
－
Ratings
-0.3 to 6.5
220
-65 to 125
-40 to 85
-0.3 to V CC +1.0
Unit
V
mW
℃
℃
V
Remarks
When using at Ta=25 ℃ or higher, 2.2mW to be reduced per 1 ℃
The Max value of Terminal Voltage is not over 6.5V.
● Memory cell characteristics (Ta=25 ℃ , Vcc=1.7V to 5.5V)
Parameter
Limits
Min. Typ.
Max.
Unit
Number of data rewrite times *1
Data hold years *1
1,000,000
40
－
－
－
－
Times
Years
Shipment data all address FFh
*1 Not 100% TESTED
● Recommended Operating Ratings
Parameter
Power source voltage
Input voltage
Symbol
V CC
V IN
Ratings
1.7 to 5.5
0 to V CC
Unit
V
○ Product structure ： Silicon monolithic integrated circuit
○ This product is not designed protection against radioactive rays
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 14 ? 001
1/22
TSZ02201-0R2R0G100340-1-2
21.AUG.2012 Rev.001
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