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参数资料
| 型号： | BUK9523-75A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 53A I(D) | TO-220AB |
| 中文描述： | 晶体管| MOSFET的| N沟道| 75V的五（巴西）直|第53A条（丁）| TO - 220AB现有 |
| 文件页数： | 11/15页 |
| 文件大小： | 315K |
| 代理商： | BUK9523-75A |
Philips Semiconductors
BUK9509-75A; BUK9609-75A
TrenchMOS logic level FET
Product specication
Rev. 02 — 06 November 2000
5 of 15
9397 750 07656
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C75
V
Tj = 55 °C70
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
V
Tj = 55 °C
2.3
V
IDSS
drain-source leakage current
VDS = 75 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID =25A;
Tj =25 °C
7.6
9
m
Tj = 175 °C
18.9
m
VGS = 4.5 V; ID =25A
9.95
m
VGS =10V; ID =25A
7.23
8.5
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
6631
8840
pF
Coss
output capacitance
905
1090
pF
Crss
reverse transfer capacitance
610
840
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =5V; RG =10
47
ns
tr
rise time
185
ns
td(off)
turn-off delay time
424
ns
tf
fall time
226
ns
Ld
internal drain inductance
from drain lead 6 mm from
package to centre of die
4.5
nH
from contact screw on
mounting base to centre of
die SOT78
3.5
nH
from upper edge of drain
mounting base to centre of
die SOT404
2.5
nH
Ls
internal source inductance
from source lead to source
bond pad
7.5
nH
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相关代理商/技术参数 |
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| BUK9523-75A,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK9524-55 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET |
| BUK9524-55/B | 制造商:NXP Semiconductors 功能描述: |
| BUK9524-55A | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK9524-55A,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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