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| 型号： | BX80552641T2 |
| 厂商： | INTEL CORP |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, 3200 MHz, MICROPROCESSOR, PBGA775 |
| 封装： | FLIP CHIP, LGA-775 |
| 文件页数： | 92/108页 |
| 文件大小： | 3283K |
| 代理商： | BX80552641T2 |
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86
Datasheet
Thermal Specifications and Design Considerations
specifications. Two different sets of "diode" parameters are listed in Table 5-3 and Table 5-4. The
Diode Model parameters (Table 5-3) apply to traditional thermal sensors that use the Diode
Equation to determine the processor temperature. Transistor Model parameters (Table 5-4) have
been added to support thermal sensors that use the transistor equation method. The Transistor
Model may provide more accurate temperature measurements when the diode ideality factor is
closer to the maximum or minimum limits. This thermal "diode" is separate from the Thermal
Monitor's thermal sensor and cannot be used to predict the behavior of the Thermal Monitor.
NOTES:
1. Intel does not support or recommend operation of the thermal diode under reverse bias.
2. Characterized across a temperature range of 50 – 80 °C.
3. Not 100% tested. Specified by design characterization.
4. The ideality factor, n, represents the deviation from ideal diode behavior as exemplified by the diode
equation:
IFW = IS * (e
qV
D
/nkT –1)
where IS = saturation current, q = electronic charge, VD = voltage across the diode, k = Boltzmann Constant,
and T = absolute temperature (Kelvin).
5. The series resistance, RT, is provided to allow for a more accurate measurement of the junction temperature.
RT, as defined, includes the lands of the processor but does not include any socket resistance or board trace
resistance between the socket and the external remote diode thermal sensor. RT can be used by remote
diode thermal sensors with automatic series resistance cancellation to calibrate out this error term. Another
application is that a temperature offset can be manually calculated and programmed into an offset register in
the remote diode thermal sensors as exemplified by the equation:
Terror = [RT * (N-1) * IFWmin] / [nk/q * ln N]
where Terror = sensor temperature error, N = sensor current ratio, k = Boltzmann Constant, q = electronic
charge.
NOTES:
1. Intel does not support or recommend operation of the thermal diode under reverse bias.
3. Characterized across a temperature range of 50 - 80 °C.
4. Not 100% tested. Specified by design characterization.
5. The ideality factor, nQ, represents the deviation from ideal transistor model behavior as exemplified by the
equation for the collector current:
IC = IS * (e
qV
BE
/n
Q
kT –1)
Where IS = saturation current, q = electronic charge, VBE = voltage across the transistor base emitter junction
(same nodes as VD), k = Boltzmann Constant, and T = absolute temperature (Kelvin).
6. The series resistance, RT, provided in the Diode Model Table (Table 5-3) can be used for more accurate
readings as needed.
Table 5-3. Thermal “Diode” Parameters using Diode Model
Symbol
Parameter
Min
Typ
Max
Unit
Notes
IFW
Forward Bias Current
5
—
200
A
1
n
Diode Ideality Factor
1.000
1.009
1.050
-
2, 3, 4
RT
Series Resistance
2.79
4.52
6.24
Ω
2, 3, 5
Table 5-4. Thermal “Diode” Parameters using Transistor Model
Symbol
Parameter
Min
Typ
Max
Unit
Notes
IFW
Forward Bias Current
5
—
200
A
1, 2
IE
Emitter Current
5
—
200
nQ
Transistor Ideality
0.997
1.001
1.005
—
3, 4, 5
Beta
0.391
—
0.760
—
3, 4
RT
Series Resistance
2.79
4.52
6.24
Ω
3, 6
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