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| 型号： | BZT52B6V2-V-GS18 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 6.2 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封装： | ROHS COMPLIANT PACKAGE-2 |
| 文件页数： | 1/8页 |
| 文件大小： | 117K |
| 代理商： | BZT52B6V2-V-GS18 |
BZT52-V-Series
Document Number 85760
Rev. 1.6, 15-Apr-10
Vishay Semiconductors
www.vishay.com
1
17431
For technical support, please contact: DiodesSSP@vishay.com
Small Signal Zener Diodes
Features
Silicon planar power zener diodes
These diodes are also available in other
case styles and other configurations
including: the SOT-23 case with type
designation BZX84 series, the dual zener
diode common anode configuration in the
SOT-23 case with type designation AZ23 series
and the dual zener diode common cathode
configuration in the SOT-23 case with type
designation DZ23 series.
The zener voltages are graded according to the
international E 24 standard.
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-123
Weight: approx. 9.3 mg
Packaging codes/options:
GS18/10 k per 13 " reel (8 mm tape), 10 k/box
GS08/3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas
2) Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Parameter
Test condition
Symbol
Value
Unit
Zener current see table
" Characteristics "
Power dissipation
Ptot
500 2)
mW
Power dissipation
Ptot
410 1)
mW
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
RthJA
300 1)
°C/W
Junction temperature
TJ
150
°C
Storage temperature range
TS
- 65 to + 150
°C
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相关代理商/技术参数 |
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| BZT52B6V8 | 功能描述:稳压二极管 6.8 Volt 410mW 2% RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| BZT52-B6V8 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SILICON ZENER DIODES |
| BZT52B6V8 _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BZT52B6V8 RH | 制造商:SKMI/Taiwan 功能描述:Diode Zener Single 6.8V 2% 500mW 2-Pin SOD-123F T/R |
| BZT52B6V8 RHG | 功能描述:DIODE ZENER 6.8V 500MW SOD123F 制造商:taiwan semiconductor corporation 系列:- 包装:带卷（TR） 零件状态:在售 电压 - 齐纳（标称值）（Vz）:6.8V 容差:±2% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:15 Ohms 不同?Vr 时的电流 - 反向漏电流:1.8μA @ 4V 不同 If 时的电压 - 正向（Vf:1V @ 10mA 工作温度:150°C（TJ） 安装类型:表面贴装 封装/外壳:SOD-123F 供应商器件封装:SOD-123F 标准包装:3,000 |
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