参数资料
型号: CAT25640VI-GT3
厂商: ON Semiconductor
文件页数: 11/19页
文件大小: 0K
描述: IC EEPROM 64KBIT 10MHZ 8SOIC
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 64K (8K x 8)
速度: 20MHz
接口: SPI 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 标准包装
其它名称: CAT25640VI-GT3OSDKR
CAT25640
READ OPERATIONS
Read from Memory Array
To read from memory, the host sends a READ instruction
followed by a 16 ? bit address (see Table 13 for the number
of significant address bits).
After receiving the last address bit, the CAT25640 will
respond by shifting out data on the SO pin (as shown in
Figure 9). Sequentially stored data can be read out by simply
continuing to run the clock. The internal address pointer is
automatically incremented to the next higher address as data
is shifted out. After reaching the highest memory address,
the address counter “rolls over” to the lowest memory
CS
address, and the read cycle can be continued indefinitely.
The read operation is terminated by taking CS high.
Read Status Register
To read the status register, the host simply sends a RDSR
command. After receiving the last bit of the command, the
CAT25640 will shift out the contents of the status register on
the SO pin (Figure 10). The status register may be read at
any time, including during an internal write cycle. While the
internal write cycle is in progress, the RDSR command will
output the contents of the status register.
0
1
2
3
4
5
6
7
8
9
10
20 21
22 23
24
25
26 27
28 29
30
SCK
OPCODE
BYTE ADDRESS*
SI
0
0
0
0
0
0
1
1
A N
A 0
SO
HIGH IMPEDANCE
7
6
5
DATA OUT
4 3 2
1
0
CS
Dashed Line = mode (1, 1)
* Please check the Byte Address Table (Table 13)
Figure 9. READ Timing
MSB
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
SCK
OPCODE
SI
0
0
0
0
0
1
0
1
SO
HIGH IMPEDANCE
7
6
5
4
DATA OUT
3
2
1
0
Dashed Line = mode (1, 1)
MSB
Figure 10. RDSR Timing
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