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参数资料
| 型号： | CAT28C512GI12 |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 512KBIT 120NS 32PLCC |
| 产品变化通告： | Product Obsolescence 05/Oct/2010 |
| 标准包装： | 32 |
| 格式 - 存储器： | EEPROMs - 并行 |
| 存储器类型： | EEPROM |
| 存储容量： | 512K (64K x 8) |
| 速度： | 120ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 32-LCC（J 形引线） |
| 供应商设备封装： | 32-PLCC（11.43x13.97） |
| 包装： | 管件 |
| 其它名称： | CAT28C512GI-12 CAT28C512GI-12-ND |
CAT28C512/513
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. – 55 ° C to +125 ° C
Storage Temperature ....................... – 65 ° C to +150 ° C
Voltage on Any Pin with
Respect to Ground (2) ........... – 2.0V to +V CC + 2.0V
V CC with Respect to Ground ............... – 2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25 ° C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300 ° C
Output Short Circuit Current (3) ........................ 100 mA
RELIABILITY CHARACTERISTICS
*COMMENT
Stresses above those listed under “ Absolute Maximum
Ratings ” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
Symbol
N END(1)
T DR(1)
V ZAP(1)
I LTH(1)(4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-Up
Min
100,000
100
2000
100
Max.
Units
Cycles/Byte
Years
Volts
mA
Test Method
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
D.C. OPERATING CHARACTERISTICS
V CC = 5V ± 10%, unless otherwise specified.
Limits
Symbol
I CC
Parameter
V CC Current (Operating, TTL)
Min
Typ
Max.
50
Units
mA
Test Conditions
CE = OE = V IL , f=6MH z
All I/O ’ s Open
I CCC(5)
V CC Current (Operating, CMOS)
25
mA
CE = OE = V ILC , f=6MH z
All I/O ’ s Open
I SB
I SBC(6)
V CC Current (Standby, TTL)
V CC Current (Standby, CMOS)
3
200
mA
μ A
CE = V IH , All I/O ’ s Open
CE = V IHC ,
All I/O ’ s Open
I LI
I LO
Input Leakage Current
Output Leakage Current
-10
-10
10
10
μ A
μ A
V IN = GND to V CC
V OUT = GND to V CC ,
CE = V IH
V IH(6)
V IL(5)
High Level Input Voltage
Low Level Input Voltage
2
-1
V CC +0.3
0.8
V
V
V OH
V OL
V WI
High Level Output Voltage
Low Level Output Voltage
Write Inhibit Voltage
2.4
3.5
0.4
V
V
V
I OH = – 400 μ A
I OL = 2.1mA
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is – 0.5V. During transitions, inputs may undershoot to – 2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is V CC +0.5V, which may overshoot to V CC +2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from – 1V to V CC +1V.
(5) V ILC = – 0.3V to +0.3V.
(6) V IHC = V CC – 0.3V to V CC +0.3V.
? 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
3
Doc. No. MD-1007, Rev . I
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT28C512GI-12 | 制造商:ON Semiconductor 功能描述:IC EEPROM 512KBIT PARALLEL LCC-32 |
| CAT28C512GI-12T | 功能描述:电可擦除可编程只读存储器 512K-Bit CMOS PARA 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT28C512GI-15 | 功能描述:电可擦除可编程只读存储器 64K X 8 512K 5V 150 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT28C512GI-15T | 功能描述:电可擦除可编程只读存储器 512K-Bit CMOS PARA 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT28C512H-12 | 功能描述:电可擦除可编程只读存储器 64K X 8 512K 5V 120 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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