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参数资料
| 型号： | CAT28C512GI12 |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/12页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 512KBIT 120NS 32PLCC |
| 产品变化通告： | Product Obsolescence 05/Oct/2010 |
| 标准包装： | 32 |
| 格式 - 存储器： | EEPROMs - 并行 |
| 存储器类型： | EEPROM |
| 存储容量： | 512K (64K x 8) |
| 速度： | 120ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 32-LCC（J 形引线） |
| 供应商设备封装： | 32-PLCC（11.43x13.97） |
| 包装： | 管件 |
| 其它名称： | CAT28C512GI-12 CAT28C512GI-12-ND |
CAT28C512/513
Page Write
The page write mode of the CAT28C512/513 (essen-
tially an extended BYTE WRITE mode) allows from 1 to
128 bytes of data to be programmed within a single
EEPROM write cycle. This effectively reduces the byte-
write time by a factor of 128.
Following an initial WRITE operation ( WE pulsed low, for
t WP , and then high) the page write mode can begin by
issuing sequential WE pulses, which load the address
and data bytes into a 128 byte temporary buffer. The
page address where data is to be written, specified by
bits A 7 to A 15 , is latched on the last falling edge of WE .
Each byte within the page is defined by address bits A 0
Figure 5. Byte Write Cycle [ CE Controlled]
ADDRESS
to A 6 (which can be loaded in any order) during the first
and subsequent write cycles. Each successive byte load
cycle must begin within t BLC MAX of the rising edge of the
preceding WE pulse. There is no page write window
limitation as long as WE is pulsed low within t BLC MAX .
Upon completion of the page write sequence, WE must
stay high a minimum of t BLC MAX for the internal auto-
matic program cycle to commence. This programming
cycle consists of an erase cycle, which erases any data
that existed in each addressed cell, and a write cycle,
which writes new data back into the cell. A page write will
only write data to the locations that were addressed and
will not rewrite the entire page.
tWC
tAS
tAH
tBLC
tCW
CE
tOEH
OE
tCS
tOES
tCH
WE
HIGH-Z
DATA OUT
DATA IN
DATA VALID
Figure 6. Page Mode Write Cycle
OE
CE
t WP
tDS
t BLC
tDH
WE
ADDRESS
t WC
I/O
LAST BYTE
BYTE 0
BYTE 1
BYTE 2
BYTE n
BYTE n+1
BYTE n+2
? 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
7
Doc. No. MD-1007, Rev . I
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT28C512GI-12 | 制造商:ON Semiconductor 功能描述:IC EEPROM 512KBIT PARALLEL LCC-32 |
| CAT28C512GI-12T | 功能描述:电可擦除可编程只读存储器 512K-Bit CMOS PARA 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT28C512GI-15 | 功能描述:电可擦除可编程只读存储器 64K X 8 512K 5V 150 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT28C512GI-15T | 功能描述:电可擦除可编程只读存储器 512K-Bit CMOS PARA 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT28C512H-12 | 功能描述:电可擦除可编程只读存储器 64K X 8 512K 5V 120 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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