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| 型号： | CAT93C66XI |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/16页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 4KBIT 2MHZ 8SOIC |
| 标准包装： | 94 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 4K（512 x 8 或 256 x 16） |
| 速度： | 2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.209"，5.30mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
CAT93C66, CAT93W66
Table 1. PIN FUNCTION
Pin Name
CS
SK
DI
DO
Function
Chip Select
Clock Input
Serial Data Input
Serial Data Output
Pin Name
V CC
GND
ORG (Note 1)
NC
Function
Power Supply
Ground
Memory Organization
No Connection
1. ORG Pin available for the CAT93C66 only.
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameters
Storage Temperature
Voltage on Any Pin with Respect to Ground (Note 2)
Ratings
? 65 to +150
? 0.5 to +6.5
Units
° C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. The DC input voltage on any pin should not be lower than ? 0.5 V or higher than V CC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than ? 1.5 V or overshoot to no more than V CC + 1.5 V, for periods of less than 20 ns.
Table 3. RELIABILITY CHARACTERISTICS (Note 3)
Symbol
N END (Note 4)
T DR
Endurance
Data Retention
Parameter
Min
1,000,000
100
Units
Program / Erase Cycles
Years
3. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC ? Q100
and JEDEC test methods.
4. Block Mode, V CC = 5 V, 25 ° C.
Table 4. D.C. OPERATING CHARACTERISTICS ? MATURE PRODUCT
( V CC = +1.8 V to +5.5 V, T A = ? 40 ° C to +125 ° C unless otherwise specified.)
Symbol
I CC1
I CC2
Parameter
Power Supply Current
(Write)
Power Supply Current
(Read)
Test Conditions
f SK = 1 MHz, V CC = 5.0 V
f SK = 1 MHz, V CC = 5.0 V
Min
Max
1
500
Units
mA
m A
I SB1
I SB2
I LI
Power Supply Current
(Standby) (x8 Mode)
Power Supply Current
(Standby) (x16 Mode)
Input Leakage Current
V IN = GND or V CC ,
CS = GND ORG = GND
V IN = GND or V CC , CS = GND
ORG = Float or V CC
V IN = GND to V CC
T A = ? 40 ° C to +85 ° C
T A = ? 40 ° C to +125 ° C
T A = ? 40 ° C to +85 ° C
T A = ? 40 ° C to +125 ° C
T A = ? 40 ° C to +85 ° C
2
4
1
2
1
m A
m A
m A
T A = ? 40 ° C to +125 ° C
2
I LO
V IL1
V IH1
V IL2
V IH2
Output Leakage Current
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
V OUT = GND to V CC ,
CS = GND
4.5 V ≤ V CC < 5.5 V
4.5 V ≤ V CC < 5.5 V
1.8 V ≤ V CC < 4.5 V
1.8 V ≤ V CC < 4.5 V
T A = ? 40 ° C to +85 ° C
T A = ? 40 ° C to +125 ° C
? 0.1
2
0
V CC x 0.7
1
2
0.8
V CC + 1
V CC x 0.2
V CC + 1
m A
V
V
V
V
V OL1
V OH1
V OL2
V OH2
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
4.5 V ≤ V CC < 5.5 V, I OL = 2.1 mA
4.5 V ≤ V CC < 5.5 V, I OH = ? 400 m A
1.8 V ≤ V CC < 4.5 V, I OL = 1 mA
1.8 V ≤ V CC < 4.5 V, I OH = ? 100 m A
2.4
V CC ? 0.2
0.4
0.2
V
V
V
V
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相关代理商/技术参数 |
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|---|---|
| CAT93C66XI-1.8 | 功能描述:电可擦除可编程只读存储器 (512x8) (256x16) 4K RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT93C66XI-T2 | 功能描述:电可擦除可编程只读存储器 4K-Bit Microwire Serial 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT93C66Y | 功能描述:电可擦除可编程只读存储器 (512x8) (256x16) 4K RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT93C66Y-1.8 | 功能描述:电可擦除可编程只读存储器 (512x8) (256x16) 4K RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT93C66YGI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Catalyst Semiconductor 功能描述: |
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