参数资料
型号: CAT93C86VI-GT3
厂商: ON Semiconductor
文件页数: 3/10页
文件大小: 0K
描述: IC EEPROM 16KBIT 3MHZ 8SOIC
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 16K(2K x 8 或 1K x 16)
速度: 3MHz
接口: Microwire 3 线串行
电源电压: 2.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 标准包装
产品目录页面: 807 (CN2011-ZH PDF)
其它名称: CAT93C86VI-GT3DKR
CAT93C86
Table 4. PIN CAPACITANCE (Note 5)
Symbol
C OUT
C IN
Test
Output Capacitance (DO)
Input Capacitance (CS, SK, DI, ORG)
Conditions
V OUT = 0 V
V IN = 0 V
Min
Typ
Max
5
5
Units
pF
pF
Table 5. POWER ? UP TIMING (Notes 5, 6)
Symbol
t PUR
t PUW
Parameter
Power ? up to Read Operation
Power ? up to Write Operation
Max
1
1
Units
ms
ms
Table 6. A.C. TEST CONDITIONS
Input Rise and Fall Times
≤ 50 ns
Input Pulse Voltages
Timing Reference Voltages
Input Pulse Voltages
Timing Reference Voltages
Table 7. A.C. CHARACTERISTICS
0.4 V to 2.4 V
0.8 V, 2.0 V
0.2 x V CC to 0.7 x V CC
0.5 x V CC
4.5 V ≤ V CC ≤ 5.5 V
4.5 V ≤ V CC ≤ 5.5 V
1.8 V ≤ V CC ≤ 4.5 V
1.8 V ≤ V CC ≤ 4.5 V
V CC =
1.8 V ? 5.5 V
V CC =
2.5 V ? 5.5 V
V CC =
4.5 V ? 5.5 V
Symbol
Parameter
Test Conditions
Min
Max
Min
Max
Min
Max
Units
t CSS
t CSH
t DIS
t DIH
t PD1
CS Setup Time
CS Hold Time
DI Setup Time
DI Hold Time
Output Delay to 1
200
0
200
200
1
100
0
100
100
0.5
50
0
50
50
0.15
ns
ns
ns
ns
m s
t PD0
t HZ (Note 5)
t EW
t CSMIN
t SKHI
t SKLOW
t SV
Output Delay to 0
Output Delay to High ? Z
Program/Erase Pulse Width
Minimum CS Low Time
Minimum SK High Time
Minimum SK Low Time
Output Delay to Status Valid
C L = 100 pF (Note 7)
1
1
1
1
400
5
1
0.5
0.5
0.5
0.5
200
5
0.5
0.15
0.15
0.15
0.15
100
5
0.1
m s
ns
ms
m s
m s
m s
m s
SK MAX
Maximum Clock Frequency
DC
500
DC
1000
DC
3000
kHz
5. These parameters are tested initially and after a design or process change that affects the parameter.
6. t PUR and t PUW are the delays required from the time V CC is stable until the specified operation can be initiated.
7. The input levels and timing reference points are shown in the “A.C. Test Conditions” table.
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