参数资料
型号: CGD1042H
厂商: NXP Semiconductors N.V.
元件分类: 功率放大器
英文描述: 1 GHz, 23 dB gain high output power doubler
封装: CGD1042H<SOT115J|<<<1<Always Pb-free,;
文件页数: 2/8页
文件大小: 85K
代理商: CGD1042H
CGD1042H
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 28 September 2010
2 of 8
NXP Semiconductors
CGD1042H
1 GHz, 23 dB gain high output power doubler
2.
Pinning information
3.
Ordering information
4.
Limiting values
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
1
input
2, 3
common
5+VB
7, 8
common
9output
9
13 57
23 78
5
9
1
sym095
Table 3.
Ordering information
Type number
Package
Name
Description
Version
CGD1042H
-
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2
6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VB
supply voltage
-
30
V
Vi(RF)
RF input voltage
single tone
-
75
dBmV
Tstg
storage temperature
40
+100
C
Tmb
mounting base temperature
20
+100
C
相关PDF资料
PDF描述
CGD1044HI 1 GHz, 25 dB gain GaAs high output power doubler
CGD1044H 1 GHz, 25 dB gain high output power doubler
CGD1046HI 1 GHz, 27 dB gain GaAs high output power doubler
CGD942C 870 MHz, 23 dB gain power doubler amplifier
CGD944C 870 MHz, 25 dB gain power doubler amplifier
相关代理商/技术参数
参数描述
CGD1042H,112 功能描述:射频混合器 CATV MODULES RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube
CGD1042H_09 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:1 GHz, 23 dB gain high output power doubler
CGD1042H112 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
CGD1042HI 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:1 GHz, 22 dB gain GaAs high output power doubler
CGD1042HI,112 功能描述:射频放大器 1GHz,22 dB gain GaAs H-output PWR doubler RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel