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| 型号： | CGD1042H |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率放大器 |
| 英文描述： | 1 GHz, 23 dB gain high output power doubler |
| 封装： | CGD1042H<SOT115J|<<<1<Always Pb-free,; |
| 文件页数： | 3/8页 |
| 文件大小： | 85K |
| 代理商： | CGD1042H |
CGD1042H
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 28 September 2010
3 of 8
NXP Semiconductors
CGD1042H
1 GHz, 23 dB gain high output power doubler
5.
Characteristics
[1]
Gp at 1000 MHz minus Gp at 45 MHz.
[2]
flatness straight line (peak to valley).
[3]
79 NTSC channels + 75 digital channels (
6 dB offset); tilt extrapolated to 18 dB at 1000 MHz.
[4]
Direct Current (DC).
Table 5.
Characteristics
Bandwidth to 1000 MHz; VB = 24 V (DC); Tmb =35 C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
f = 45 MHz
-
21.5
-
dB
f = 1000 MHz
22.0
23.0
24.0
dB
SLsl
slope straight line
f = 45 MHz to 1000 MHz
[1] -1.5
-dB
FL
flatness of frequency response
f = 45 MHz to 1000 MHz
[2] -0.5
-dB
CTB
composite triple beat
Vo = 55 dBmV at 1000 MHz
[3] -
83
-
dBc
Vo = 59 dBmV at 1000 MHz
[3] -
75
70
dBc
CSO
composite second-order distortion
Vo = 55 dBmV at 1000 MHz
[3] -
80
-
dBc
Vo = 59 dBmV at 1000 MHz
[3] -
76
68
dBc
Xmod
cross modulation
Vo = 55 dBmV at 1000 MHz
[3] -
75
-
dB
Vo = 59 dBmV at 1000 MHz
[3] -
67
-
dB
CCN
carrier-to-composite noise
Vo = 55 dBmV at 1000 MHz
[3] -65
-dBc
Vo = 59 dBmV at 1000 MHz
[3] 55
58
-
dBc
RLin
input return loss
f = 45 MHz to 200 MHz
20.0
-
dB
f = 200 MHz to 550 MHz
17.5
-
dB
f = 550 MHz to 870 MHz
15.0
-
dB
f = 870 MHz to 914 MHz
14.5
-
dB
f = 914 MHz to 1000 MHz
14.0
-
dB
RLout
output return loss
f = 45 MHz to 200 MHz
21.0
-
dB
f = 200 MHz to 550 MHz
20.0
-
dB
f = 550 MHz to 870 MHz
18.0
-
dB
f = 870 MHz to 914 MHz
17.5
-
dB
f = 914 MHz to 1000 MHz
17.0
-
dB
NF
noise figure
f = 50 MHz to 1000 MHz
-
5.0
5.5
dB
Itot
total current
[4] 430
450
470
mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CGD1042H,112 | 功能描述:射频混合器 CATV MODULES RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| CGD1042H_09 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:1 GHz, 23 dB gain high output power doubler |
| CGD1042H112 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| CGD1042HI | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:1 GHz, 22 dB gain GaAs high output power doubler |
| CGD1042HI,112 | 功能描述:射频放大器 1GHz,22 dB gain GaAs H-output PWR doubler RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
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