- 您现在的位置：买卖IC网 > Datasheet目录73 > CGH40035F (Cree Inc)TRANS 35W RF GAN HEMT 440193 PKG Datasheet资料下载
参数资料
| 型号： | CGH40035F |
| 厂商： | Cree Inc |
| 文件页数： | 6/13页 |
| 文件大小： | 1109K |
| 描述： | TRANS 35W RF GAN HEMT 440193 PKG |
| 标准包装： | 120 |
| 系列： | GaN |
| 晶体管类型： | HEMT |
| 频率： | 0Hz ~ 4GHz |
| 增益： | 14dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10.5A |
| 电流 - 测试： | 500mA |
| 功率 - 输出： | 45W |
| 电压 - 额定： | 84V |
| 封装/外壳： | 440193 |
| 供应商设备封装： | 440193 |
| 包装： | 管件 |
| 产品目录页面： | 558 (CN2011-ZH PDF) |
| 配用： | CGH40035F-TB-ND - BOARD DEMO AMP CIRCUIT CGH40035 |
| 其它名称： | CGH40035FE |
2
CGH40035 Rev 3.4
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright ? 2008-2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25?C Case Temperature
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
VDSS
84
Volts
25?C
Gate-to-Source Voltage
VGS
-10, +2
Volts
25?C
Storage Temperature
TSTG
-65, +150
?C
Operating Junction Temperature
TJ
225
?C
Maximum Forward Gate Current
IGMAX
10.0
mA
25?C
Maximum Drain Current1
IDMAX
4.5
A
25?C
Soldering Temperature2
TS
245
?C
Screw Torque
τ
80
in-oz
Thermal Resistance, Junction to Case3
RθJC
3.0
?C/W
85?C
Case Operating Temperature3,4
TC
-40, +150
?C
30 seconds
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at
www.cree.com/products/wireless_appnotes.asp
3
Measured for the CGH40035F at P
DISS
= 42 W.
4
See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (TC
= 25?C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS
= 10 V, I
D
= 10.8 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS
= 28 V, I
D
= 500 mA
Saturated Drain Current
IDS
8.7
10.5
–
A
VDS
= 6.0 V, V
GS
= 2.0 V
Drain-Source Breakdown Voltage
VBR
120
–
–
VDC
VGS
= -8 V, I
D
= 10.8 mA
RF Characteristics2
(T
C
= 25
?C, F0
= 3.5 GHz unless otherwise noted)
Small Signal Gain
GSS
13
14
–
dB
VDD
= 28 V, I
DQ
= 500 mA
Power Output3
PSAT
30
45
–
W
VDD
= 28 V, I
DQ
= 500 mA
Drain Effciency4
η
50
60
–
%
VDD
= 28 V, I
DQ
= 500 mA, P
SAT
Output Mismatch Stress
VSWR
–
–
10 : 1
Y
No damage at all phase angles,
VDD
= 28 V, I
DQ
= 500 mA,
POUT
= 35 W CW
Dynamic Characteristics
Input Capacitance
CGS
–
14.7
–
pF
VDS
= 28 V, V
gs
= -8 V, f = 1 MHz
Output Capacitance
CDS
–
4.9
–
pF
VDS
= 28 V, V
gs
= -8 V, f = 1 MHz
Feedback Capacitance
CGD
–
0.6
–
pF
VDS
= 28 V, V
gs
= -8 V, f = 1 MHz
Notes:
1
Measured on wafer prior to packaging.
2 Measured in CGH40035F-TB.
3
P
SAT
is defned as I
G
= 1.08 mA.
4
Drain Effciency = P
OUT
/ P
DC
相关PDF资料 |
PDF描述 |
|---|---|
| CGH40045F | TRANS 45W RF GAN HEMT 440193 PKG |
| CGH40120F | TRANS 120W RF GAN HEMT 440193PKG |
| CGH40180PP | TRANS 180W RF GAN HEMT 440199PKG |
| CGH55015F2 | FET RF HEMT 5.65GHZ 84V 440166 |
| CGH55030F2 | FET RF HEMT 6GHZ 28V 440166 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CGH40035F-TB | 功能描述:BOARD DEMO AMP CIRCUIT CGH40035 RoHS:是 类别:RF/IF 和 RFID >> RF 评估和开发套件，板 系列:GaN 标准包装:1 系列:- 类型:GPS 接收器 频率:1575MHz 适用于相关产品:- 已供物品:模块 其它名称:SER3796 |
| CGH40045 | 制造商:CREE 制造商全称:Cree, Inc 功能描述:45 W, RF Power GaN HEMT |
| CGH40045F | 功能描述:TRANS 45W RF GAN HEMT 440193 PKG RoHS:是 类别:分离式半导体产品 >> RF FET 系列:GaN 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| CGH40045F-TB | 功能描述:BOARD DEMO AMP CIRCUIT CGH40045 RoHS:是 类别:RF/IF 和 RFID >> RF 评估和开发套件，板 系列:GaN 标准包装:1 系列:- 类型:GPS 接收器 频率:1575MHz 适用于相关产品:- 已供物品:模块 其它名称:SER3796 |
| CGH40090PP | 制造商:Cree 功能描述:TRANS 90W RF GAN HEMT 440199 PKG |
发布紧急采购，3分钟左右您将得到回复。