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参数资料
| 型号： | CM1231-02SO |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | DIODE ESD CLAMP 2CH SOT23-6 |
| 标准包装： | 3,000 |
| 电极标记： | 2 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 |
| 供应商设备封装： | SOT-23-6 |
| 包装： | 带卷 (TR) |
| 其它名称： | CM1231-02SO-ND CM1231-02SOOSTR |
CM1231 ? 02SO
Table 3. E LECTRICAL OPERATING CHARACTERISTIC S (Note 1)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V P
I CC5
Operating Supply Voltage
Operating Supply Current
V P = 5 V
5
5.5
1
V
m A
V F
Diode Forward Voltage
Top Diode
Bottom Diode
I F = 8 mA, T A = 25 ° C
0.60
0.60
0.80
0.80
0.95
0.95
V
V ESD
I RES
V CL
R DYN
C OUT
ESD Protection, Contact Discharge per IEC
61000 ? 4 ? 2 Standard
OUT ? to ? V N Contact
IN ? to ? V N Contact
Residual ESD Peak Current on RDUP
(Resistance of Device Under Protection)
Channel Clamp Voltage
Positive Transients
Negative Transients
Dynamic Resistance
Positive Transients
Negative Transients
OUT Capacitance
T A = 25 ° C
IEC 61000 ? 4 ? 2 8 kV
RDUP = 5 W , T A = 25 ° C
I PP = 1 A, T A = 25 ° C, t P = 8/20 m s,
Zap at OUT, Measure at IN
I PP = 1 A, T A = 25 ° C, t P = 8/20 m s,
Zap at OUT, Measure at IN
f = 1 MHz, V P = 5.0 V, V IN = 2.5 V,
V OSC = 30 mV
± 12
± 4
2.3
+9
–1.4
0.4
0.3
1.5
kV
A
V
W
pF
(Note 2)
D C OUT
R S
Channel to Channel Capacitance Match
Series Resistance
f = 1 MHz, V P = 5.0 V, V IN = 2.5 V,
V OSC = 30 mV
0.02
1
pF
W
D R S
Channel to Channel Resistance Match
± 10
± 30
m W
1. All parameters specified at T A = –40 ° C to +85 ° C unless otherwise noted.
2. Capacitance measured from OUT to V N with IN floating.
http://onsemi.com
3
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