参数资料
型号: CM1231-02SO
厂商: ON Semiconductor
文件页数: 6/12页
文件大小: 0K
描述: DIODE ESD CLAMP 2CH SOT23-6
标准包装: 3,000
电极标记: 2 通道阵列 - 双向
安装类型: 表面贴装
封装/外壳: SOT-23-6
供应商设备封装: SOT-23-6
包装: 带卷 (TR)
其它名称: CM1231-02SO-ND
CM1231-02SOOSTR
CM1231 ? 02SO
Advantages of the CM1231 ? 02SO Dual Stage ESD Protection Architecture
Figure 4 illustrates a single stage ESD protection device. The inductor element represents the parasitic inductance arising
from the bond wire and the PCB trace leading to the ESD protection diodes.
Connector
ASIC
Bond Wire
Inductance
ESD
Stage
Figure 4. Single Stage ESD Protection Model
Figure 5 illustrates one of the two CM1231 ? 02SO channels. Similarly, the inductor elements represent the parasitic
inductance arising from the bond wire and PCB traces leading to the ESD protection diodes as well.
Bond Wire
Inductance
Series
Bond Wire
Inductance
Connector
1 st
Stage
Element
2 nd
Stage
ASIC
Figure 5. CM1231 ? 02SO Dual Stage ESD Protection Model
CM1231 ? 02SO Inductor Elements
In the CM1231 ? 02SO dual stage PicoGuard XP t
architecture, the inductor elements and ESD protection
diodes interact differently compared to the single stage
model.
In the single stage model, the inductive element presents
high impedance at high frequency, i.e. during an ESD strike.
The impedance increases the resistance of the conduction
path leading to the ESD protection element. This limits the
speed that the ESD pulse can discharge through the single
stage protection element.
In the PicoGuard XP t architecture, the inductance
elements are in series to the conduction path leading to the
protected device. The elements actually help to limit the
current and voltage striking the protected device.
shunted through the first stage. At the same time the voltage
drop across series element helps to lower the clamping
voltage at the protected terminal.
The inductor elements also tune the impedance of the
stage by cancelling the capacitive load presented by the ESD
diodes to the signal line. This improves the signal integrity
and makes the ESD protection stages more transparent to the
high bandwidth data signals passing through the channel.
The innovative PicoGuard XP t architecture turns the
disadvantages of the parasitic inductive elements into useful
components that help to limit the ESD current strike to the
protected device and also improves the signal integrity of the
system by balancing the capacitive loading effects of the
ESD diodes.
The reactance of the series and the inductor elements in
the second stage forces more of the ESD strike current to be
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