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参数资料
| 型号： | CMBD1205 |
| 厂商： | Continental Device India Limited |
| 英文描述： | SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
| 中文描述： | 硅平面高速二极管外延 |
| 文件页数： | 2/3页 |
| 文件大小： | 131K |
| 代理商： | CMBD1205 |
Continental Device India Limited
Data Sheet
Page 2 of 3
Reverse recovery time when switched from
IF = 10 mA to IR = 10 mA; RL = 100 ;
measured at IR = 1 mA
trr
<
4ns
RATINGS (per diode) (at TA = 25°C unless otherwise specified)
Limiting values
Continuous reverse voltage
VR
max.
75 V
Repetitive peak reverse voltage
VRRM
max.
100 V
Repetitive peak forward current
IFRM
max.
500 mA
Forward current
IF
max.
215 mA
Non-repetitive peak forward current (per crystal)
t = 1 s
IFSM
max.
4 A
t = 1 ms
IFSM
max.
1.0 A
t = 1 s
IFSM
max.
0.5 A
Storage temperature
Tstg
–55 to +150 ° C
Junction temperature
Tj
max.
150 ° C
THERMAL RESISTANCE
From junction to ambient
Rth j–a
=
500 K/W
CHARACTERISTICS (per diode)
Tj = 25 °C unless otherwise specified
Forward voltage
IF = 10 mA
VF
<
0.855 V
IF = 200 mA
VF
<
1.05 V
IF = 10 mA
CMBD4148
VF
<
1.0 V
Reverse currents
VR = 20 V
IR
<
25 nA
VR = 75 V
IR
<
5A
VR = 25 V; Tj = 150 °C
IR
<
30 A
Forward recovery voltage
IF = 10 mA; tp = 20 ns
Vfr
<
1.75 V
Recovery charge
IF = 10 mA to VR = 5V; R = 100
Qs
<45 pC
Diode capacitance
VR = 0; f = 1 MHz
Cd
<
2pF
Reverse recovery time when switched from
IF = 10 mA to IR = 10 mA; RL = 100 ;
measured at IR = 1 mA
trr
<
4ns
CMBD1201, CMBD1202, CMBD1203
CMBD1204, CMBD1205, CMBD4148
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| CMBT8050 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
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