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参数资料
| 型号： | CMBD4148 |
| 厂商： | Continental Device India Limited |
| 英文描述： | SILICON PLANAR EPITAXIAL HIGH SPEED DIODES |
| 中文描述： | 硅平面高速二极管外延 |
| 文件页数： | 3/3页 |
| 文件大小： | 131K |
| 代理商： | CMBD4148 |
Continental Device India Limited
Data Sheet
Page 3 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112
Fax + 91-11-2579 5290, 5141 1119
mail@cdil.com
www.cdilsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CMBD4148-T | 功能描述:稳压二极管 75V Signal RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| CMBD4148T/-W | 功能描述:稳压二极管 75V Signal RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| CMBD4150 | 制造商:CDIL 制造商全称:Continental Device India Limited 功能描述:SILICON PLANAR EPITAXIAL HIGH SPEED DIODE |
| CMBD4448 | 制造商:CDIL 制造商全称:Continental Device India Limited 功能描述:SILICON PLANAR SWITCHING DIODE |
| CMBD7000N3 | 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:High -speed double diode |
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