参数资料
型号: CMDD4448TR
厂商: CENTRAL SEMICONDUCTOR CORP
元件分类: 二极管(射频、小信号、开关、功率)
中文描述: 0.25 A, 100 V, SILICON, SIGNAL DIODE
封装: PLASTIC, SUPERMINI-2
文件页数: 1/2页
文件大小: 76K
代理商: CMDD4448TR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMDD4448
type is a ultra-high speed silicon switching diode
manufactured by the epitaxial planar process,
epoxy molded in a SUPERmini
TM surface mount
package, designed for high speed switching
applications.
MARKING CODE: 44
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
75
V
Peak Repetitive Reverse Voltage
VRRM
100
V
Continuous Forward Current
IF
250
mA
Peak Repetitive Forward Current
IFRM
500
mA
Forward Surge Current, tp=1ms
IFSM
4.0
A
Forward Surge Current, tp=1 s
IFSM
1.0
A
Power Dissipation
PD
275
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +175
°C
Thermal Resistance
ΘJA
545
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
BVR
IR=5.0A
75
V
BVR
IR=100A
100
V
IR
VR=20V
25
nA
VF
IF=5.0mA
0.62
0.72
V
VF
IF=100mA
1.0
V
CT
VR=0, f=1 MHz
4.0
pF
trr
IR=IF=10mA, RL=100, Rec. to 1.0mA
4.0
ns
CMDD4448
SUPERmini
TM
HIGH SPEED
SWITCHING DIODE
SOD-323 CASE
Central
Semiconductor Corp.
TM
R5 (9-May 2007)
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