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参数资料
| 型号： | CMLT2222A |
| 厂商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 中文描述： | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC, PICOMINI-6 |
| 文件页数： | 1/2页 |
| 文件大小： | 485K |
| 代理商： | CMLT2222A |
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
600
mA
Power Dissipation (Note 1)
PD
350
mW
Power Dissipation (Note 2)
PD
300
mW
Power Dissipation (Note 3)
PD
150
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
O
C
Thermal Resistance
ΘJA
357
O
C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=60V
10
nA
ICBO
VCB=60V (TA=125°C)
10
μA
ICEV
VCE=60V, VEB=3.0V
10
nA
IEBO
VEB=3.0V
10
nA
BVCBO
IC=10μA
75
V
BVCEO
IC=10mA
40
V
BVEBO
IE=10μA
6.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.3
V
VCE(SAT)
IC=500mA, IB=50mA
1.0
V
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
V
VBE(SAT)
IC=500mA, IB=50mA
2.0
V
hFE
VCE=10V, IC=0.1mA
35
hFE
VCE=10V, IC=1.0mA
50
hFE
VCE=10V, IC=10mA
75
hFE
VCE=1.0V, IC=150mA
50
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
40
CMLT2222A
CMLT2222AG*
SURFACE MOUNT
DUAL NPN SMALL SIGNAL
SILICON SWITCHING TRANSISTORS
SOT-563 CASE
Central
Semiconductor Corp.
TM
R2 (6-March 2009)
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices consist of
two (2) isolated 2222A NPN silicon transistors,
manufactured by the epitaxial planar process and epoxy
molded in an SOT-563 surface mount package. These
PICOmini devices have been designed for small signal
general purpose and switching applications.
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm2
* Device is Halogen Free by design
MARKING CODES: CMLT2222A:
L22
CMLT2222AG*:
2CG
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CMLT2222AG | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:SURFACE MOUNT DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS |
| CMLT2222AG BK | 功能描述:TRANS 2NPN 40V 0.6A SOT563 制造商:central semiconductor corp 系列:- 包装:散装 零件状态:有效 晶体管类型:2 NPN（双） 电流 - 集电极（Ic）（最大值）:600mA 电压 - 集射极击穿（最大值）:40V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:1V @ 50mA，500mA 电流 - 集电极截止（最大值）:10nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:100 @ 150mA，10V 功率 - 最大值:350mW 频率 - 跃迁:300MHz 安装类型:表面贴装 封装/外壳:SOT-563，SOT-666 供应商器件封装:SOT-563 标准包装:5,000 |
| CMLT2222AG TR | 功能描述:两极晶体管 - BJT Dual NPN Small Signal RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| CMLT2222ATR | 制造商:Central Semiconductor Corp 功能描述: |
| CMLT2907A | 功能描述:两极晶体管 - BJT Dual PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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