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参数资料
| 型号： | CMNT3906E |
| 厂商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 中文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 1 X 0.80 MM, 0.50 MM HEIGHT, ULTRA SMALL, FEMTOMINI-5 |
| 文件页数： | 1/2页 |
| 文件大小： | 363K |
| 代理商： | CMNT3906E |
CMNT3904E NPN
CMNT3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMNT3904E
and CMNT3906E Low VCE(SAT) NPN and PNP
Transistors, respectively, are designed for applications
where ultra small size and power dissipation are the
prime requirements. Packaged in an FEMTOmini
SOT-953 package, these components provide
performance characteristics suitable for the most
demanding size constrained applications.
MARKING CODES: CMNT3904E: CL
CMNT3906E: CM
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
200
mA
Power Dissipation
PD
250
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
500
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICEV
VCE=30V, VEB=3.0V
50
nA
BVCBO
IC=10A
60
115
90
V
BVCEO
IC=1.0mA
40
60
55
V
BVEBO
IE=10A
6.0
7.5
7.9
V
VCE(SAT)
IC=10mA, IB=1.0mA
.057
.05
0.1
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.1
0.2
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.65
0.75
0.85
V
VBE(SAT)
IC=50mA, IB=5.0mA
0.85
0.95
V
hFE
VCE=1.0V, IC=0.1mA
90
240
130
hFE
VCE=1.0V, IC=1.0mA
100
235
150
Enhanced Specification
FEATURES
Very Small Package Size
Low Package Profile, 0.5mm
200mA Collector Current
Low VCE(SAT) (0.1V Typ @ 50mA)
Small, FEMTOmini 1 x 0.8mm,
SOT-953 Surface Mount Package
APPLICATIONS
DC / DC Converters
Voltage Clamping
Protection Circuits
Battery powered equipment including:
Cell Phones, Digital Cameras, Pagers,
PDAs, Laptop Computers, etc.
SOT-953 CASE
R2 (25-January 2010)
www.centr a lsemi.com
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相关代理商/技术参数 |
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