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| 型号： | CPC1590P |
| 厂商： | IXYS Integrated Circuits Division |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET GATE DVR ISO 8-FLATPACK |
| 标准包装： | 50 |
| 系列： | * |
I NTEGRATED C IRCUITS D IVISION
CPC1590
1.6 General Conditions
Unless otherwise specified, minimum and maximum values are guaranteed by production testing.
Typical values are characteristic of the device at 25°C and are the result of engineering evaluations. They are
provided for informational purposes only and are not part of the manufacturing testing requirements.
Unless otherwise noted, all electrical specifications are listed for T A =25°C.
1.7 Electrical Specifications
Parameter
Conditions
Symbol
Min
Typ
Max
Units
Load Side Characteristics
Gate Voltage
I F =2.5mA
I F =5mA
7.0
7.3
8.0
12
I F =10mA
V GS
7.5
8.4
V
I F =2.5mA
-40°C<T A <110°C
4.2
-
14.4
Capacitor Voltage
Gate Drive Capability
10V<V DS <200V
I F =2.5mA, V GS =0V, V CAP =15V
V CAP
I G_source
10
2
12.2
3.3
16
7
V
I F =0mA, V GS =8V, V CAP =8V
4.0
9.0
14
I F =0mA, V GS =4V, V CAP =4V
I F =0mA, V GS =2V, V CAP =2V
I G_sink
1.5
0.5
3.3
1.2
6
2
mA
Turn-On Delay
V DS =48V, V GS =4V, C VG =4nF
I F =2.5mA
I F =5mA
t on
1
40
12
140
40
? s
Turn-Off Delay
I F =10mA
V DS =48V, V GS =2V, C VG =4nF
5
20
I F =2.5mA
I F =5mA
t off1
40
110
125
400
? s
I F =10mA
V DS =48V, V GS =1V, C VG =4nF
I F =2.5mA
130
200
I F =5mA
t off2
40
210
600
? s
I F =10mA
220
Off-State Leakage Current
V DS =200V
I DS
-
-
1
? A
LED Characteristics
Forward Voltage Drop
Input Dropout Current
Reverse Bias Leakage Current
I F =5mA
V GS =1V
V R =5V
V F
I F
I R
1
0.2
-
1.27
0.75
-
1.4
1
10
V
mA
? A
Common Characteristics
Input to Output Capacitance
-
C I/O
-
3
-
pF
4
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