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参数资料
| 型号： | CPH6442-TL-E |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 6A CPH6 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 43 毫欧 @ 3A，10V |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1040pF @ 20V |
| 功率 - 最大： | 1.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-CPH |
| 包装： | 带卷 (TR) |
CPH6442
Note on usage : Since the CPH6442 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1242-7/7
相关PDF资料 |
PDF描述 |
|---|---|
| CPH6443-TL-H | MOSFET N-CH 35V 6A CPH6 |
| CPH6444-TL-E | MOSFET N-CH 60V 4.5A CPH6 |
| CPH6445-TL-E | MOSFET N-CH 60V 3.5A CPH6 |
| CPPD-0.85-2 | FREQ DOUBLER SMA 0.85~2.0GHZ |
| CPPD-2-4 | FREQ DOUBLER SMA 2.0~4.0GHZ |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CPH6442-TL-W | 功能描述:MOSFET N-CH 60V 6A CPH6 制造商:on semiconductor 系列:- 包装:带卷（TR） 零件状态:有效 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:逻辑电平栅极，4V 驱动 漏源极电压（Vdss）:60V 电流 - 连续漏极（Id）（25°C 时）:6A（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:43 毫欧 @ 3A，10V 不同 Id 时的 Vgs（th）（最大值）:2.6V @ 1mA 不同 Vgs 时的栅极电荷（Qg）:20nC @ 10V 不同 Vds 时的输入电容（Ciss）:1040pF @ 20V 功率 - 最大值:1.6W 工作温度:150°C（TJ） 安装类型:表面贴装 封装/外壳:SOT-23-6 细型，TSOT-23-6 供应商器件封装:6-CPH 标准包装:3,000 |
| CPH6443 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| CPH6443_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| CPH6443-P-TL-H | 功能描述:MOSFET RoHS:否 制造商:ON Semiconductor 晶体管极性: 汲极/源极击穿电压: 闸/源击穿电压: 漏极连续电流: 电阻汲极/源极 RDS（导通）: 配置: 最大工作温度: 安装风格: 封装 / 箱体: 封装: |
| CPH6443-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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