参数资料
型号: CPH6445-TL-E
厂商: ON Semiconductor
文件页数: 1/5页
文件大小: 0K
描述: MOSFET N-CH 60V 3.5A CPH6
标准包装: 3,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 3.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 117 毫欧 @ 1.5A,10V
闸电荷(Qg) @ Vgs: 6.8nC @ 10V
输入电容 (Ciss) @ Vds: 310pF @ 20V
功率 - 最大: 1.6W
安装类型: 表面贴装
封装/外壳: SOT-23-6 细型,TSOT-23-6
供应商设备封装: 6-CPH
包装: 带卷 (TR)
Ordering number : ENA1532B
CPH6445
N-Channel Power MOSFET
60V, 3.5A, 117m ? , Single CPH6
Features
http://onsemi.com
?
?
?
4V drive
Low ON-resistance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
60
±20
3.5
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 M s, duty cycle ≤ 1%
When mounted on ceramic substrate (1200mm 2 × 0.8mm)
14
1.6
150
--55 to +150
A
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
Product & Package Information
unit : mm (typ)
7018A-003
? Package
? JEITA, JEDEC
: CPH6
: SC-74, SOT-26, SOT-457
? Minimum Packing Quantity : 3,000 pcs./reel
6
2.9
5
4
0.15
CPH6445-TL-E
CPH6445-TL-W
Packing Type: TL
Marking
0.05
1
2
0.95
3
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
TL
Electrical Connection
1, 2, 5, 6
6 : Drain
CPH6
3
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014
32514HK TC-00002973/61312TKIM/21710TKIM PE No. A1532-1/5
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