参数资料
型号: CPH6445-TL-E
厂商: ON Semiconductor
文件页数: 2/5页
文件大小: 0K
描述: MOSFET N-CH 60V 3.5A CPH6
标准包装: 3,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 3.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 117 毫欧 @ 1.5A,10V
闸电荷(Qg) @ Vgs: 6.8nC @ 10V
输入电容 (Ciss) @ Vds: 310pF @ 20V
功率 - 最大: 1.6W
安装类型: 表面贴装
封装/外壳: SOT-23-6 细型,TSOT-23-6
供应商设备封装: 6-CPH
包装: 带卷 (TR)
CPH6445
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Conditions
ID= 1 mA, VGS=0V
VDS= 60 V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID= 1.5 A
ID= 1.5 A, VGS=10V
ID= 0.7 A, VGS=4.5V
ID= 0.7 A, VGS=4V
VDS=20V, f=1MHz
min
60
1.2
1.2
Ratings
typ
2.0
92
120
132
310
40
max
1
±10
2.6
117
168
185
Unit
V
M A
M A
V
S
m ?
m ?
m ?
pF
pF
Reverse Transfer Capacitance
Turn-ON Delay Time
Crss
td(on)
25
6.0
pF
ns
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
tr
td(off)
tf
Qg
Qgs
Qgd
See specified Test Circuit.
VDS=30V, VGS=10V, ID=3.5A
5.5
27
13
6.8
1.1
1.4
ns
ns
ns
nC
nC
nC
Diode Forward Voltage
VSD
IS=3.5A, VGS=0V
0.85
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
10V
0V
VIN
VIN
VDD=30V
ID=1.5A
RL=20 ?
PW=10 M s
D.C. ≤ 1%
G
D
VOUT
P.G
50 ?
S
CPH6445
Ordering Information
Device
CPH6445-TL-E
CPH6445-TL-W
Package
CPH6
Shipping
3,000pcs./reel
memo
Pb-Free
Pb-Free and Halogen Free
No. A1532-2/5
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