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参数资料
| 型号： | CPV362M4FPBF |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 电源模块 |
| 英文描述： | Trans IGBT Module N-CH 600V 8.8A 13-Pin IMS-2 |
| 中文描述： | IGBT Transistors 600 Volt 4.8 Amp |
| 文件页数： | 1/9页 |
| 文件大小： | 219K |
| 代理商： | CPV362M4FPBF |
CPV362M4FPbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-13
1
Document Number: 94361
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IGBT SIP Module
(Fast IGBT)
FEATURES
Fully
isolated
printed
circuit
board
mount
package
Switching-loss rating includes all “tail” losses
HEXFRED soft ultrafast diodes
Optimized for medium speed 1 to 10 kHz
See fig. 1 for current vs. frequency curve
Designed and qualified for industrial level
UL approved file E78996
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to the advanced line of IMS
(Insulated Metal Substrate) power modules. These modules
are more efficient than comparable bipolar transistor
modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE
IRMS per phase (3.1 kW total)
with TC = 90 °C
11 A
TJ
125 °C
Supply voltage
360 VDC
Power factor
0.8
Modulation depth See fig. 1
115 %
VCE(on) (typical)
at IC = 4.8 A, 25 °C
1.41 V
Package
SIP
Circuit
Three Phase Inverter
IMS-2
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
VCES
600
V
Continuous collector current, each
IGBT
IC
TC = 25 °C
8.8
A
TC = 100 °C
4.8
Pulsed collector current
ICM
Repetitive rating; VGE = 20 V,
pulse width limited by maximum
junction temperature. See fig. 20
26
Clamped inductive load current
ILM
VCC = 80 % (VCES), VGE = 20 V,
L = 10 μH, RG = 50 See fig. 19
800
Diode continuous forward current
IF
TC = 100 °C
3.4
Diode maximum forward current
IFM
26
Gate to emitter voltage
VGE
± 20
V
Isolation voltage
VISOL
Any terminal to case, t = 1 min
2500
VRMS
Maximum power dissipation, each
IGBT
PD
TC = 25 °C
23
W
TC = 100 °C
9.1
Operating junction and
storage temperature range
TJ, TStg
- 40 to + 150
°C
Soldering temperature
For 10 s
300 (0.063" (1.6 mm) from case)
Mounting torque
6-32 or M3 screw
5 to 7
(0.55 to 0.8)
lbf in
(N m)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TYP.
MAX.
UNITS
Junction to case, each IGBT, one IGBT in conduction
RthJC (IGBT)
-
5.5
°C/W
Junction to case, each diode, one diode in conduction
RthJC (diode)
-
9.0
Case to sink, flat, greased surface
RthCS (module)
0.1
-
Weight of module
20 (0.7)
-
g (oz.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CPV362M4K | 功能描述:IGBT SIP MODULE 600V 31 IMS-2 RoHS:否 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CPV362M4U | 功能描述:IGBT SIP MODULE 600V 3.9A IMS-2 RoHS:否 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CPV362M4UPBF | 制造商:Vishay Intertechnologies 功能描述:IGBT Module N-CH 7.2A 600V IMS-2 |
| CPV362MF | 制造商:IRF 制造商全称:International Rectifier 功能描述:IGBT SIP MODULE Fast IGBT |
| CPV362MK | 制造商:IRF 制造商全称:International Rectifier 功能描述:IGBT SIP MODULE Short Circuit Rated UltraFast IGBT |
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