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参数资料
| 型号： | CPV364M4FPBF |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 电源模块 |
| 英文描述： | Trans IGBT Module N-CH 600V 27A 13-Pin IMS-2 |
| 中文描述： | IGBT Transistors 600 Volt 15 Amp |
| 文件页数： | 5/11页 |
| 文件大小： | 236K |
| 代理商： | CPV364M4FPBF |
CPV364M4FPbF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-13
3
Document Number: 94487
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Total gate charge (turn-on)
Qg
IC = 15 A
VCC = 400 V
VGE = 15 V
See fig. 8
-
100
160
nC
Gate to emitter charge (turn-on)
Qge
-15
23
Gate to collector charge (turn-on)
Qgc
-37
56
Turn-on delay time
td(on)
TJ = 25 °C
IC = 15 A, VCC = 480 V
VGE = 15 V, RG = 10
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 11, 18
-42
-
ns
Rise time
tr
-18
-
Turn-off delay time
td(off)
-
220
330
Fall time
tf
-
160
240
Turn-on switching loss
Eon
-0.46-
mJ
Turn-off switching loss
Eoff
-0.86-
Total switching loss
Ets
-
1.32
1.8
Turn-on delay time
td(on)
TJ = 150 °C
IC = 15 A, VCC = 480 V
VGE = 15 V, RG = 10
Energy losses include “tail” and
diode reverse recovery
See fig. 9, 10, 11, 18
-39
-
ns
Rise time
tr
-19
-
Turn-off delay time
td(off)
-
410
-
Fall time
tf
-
290
-
Total switching loss
Ets
-2.5
-
mJ
Input capacitance
Cies
VGE = 0 V
VCC = 30 V
= 1.0 MHz
See fig. 7
-
2200
-
pF
Output capacitance
Coes
-
140
-
Reverse transfer capacitance
Cres
-29
-
Diode reverse recovery time
trr
TJ = 25 °C
See fig. 14
IF = 15 A
VR = 200 V
dI/dt = 200 A/μs
-42
60
ns
TJ = 125 °C
-
74
120
Diode peak reverse recovery charge
Irr
TJ = 25 °C
See fig. 15
-4.0
6.0
A
TJ = 125 °C
-
6.5
10
Diode reverse recovery charge
Qrr
TJ = 25 °C
See fig. 16
-
80
180
nC
TJ = 125 °C
-
220
600
Diode peak rate of fall of recovery
during tb
dI(rec)M/dt
TJ = 25 °C
See fig. 17
-
188
-
A/μs
TJ = 125 °C
-
160
-
相关PDF资料 |
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| CPV364M4KPBF | Trans IGBT Module N-CH 600V 24A 13-Pin IMS-2 |
| CPV364M4UPBF | Trans IGBT Module N-CH 600V 20A 13-Pin IMS-2 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CPV364M4K | 制造商:Vishay Angstrohm 功能描述:Trans IGBT Module N-CH 600V 24A 13-Pin IMS-2 制造商:Vishay Semiconductors 功能描述:TRANS IGBT MOD N-CH 600V 24A 13PIN IMS-2 - Bulk 制造商:Vishay Semiconductors 功能描述:IGBT MODULE HEX IMS-2 |
| CPV364M4KPBF | 功能描述:IGBT SIP MODULE 600V 13A IMS-2 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CPV364M4U | 功能描述:IGBT SIP MODULE 600V 10A IMS-2 RoHS:否 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CPV364M4UPBF | 制造商:Vishay Intertechnologies 功能描述:IGBT Module N-CH 20A 600V IMS-2 |
| CPV364MF | 制造商:IRF 制造商全称:International Rectifier 功能描述:IGBT SIP MODULE Fast IGBT |
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