参数资料
型号: CY7C09099V-6AXC
厂商: CYPRESS SEMICONDUCTOR CORP
元件分类: SRAM
英文描述: 3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM
中文描述: 128K X 8 DUAL-PORT SRAM, 15 ns, PQFP100
封装: ROHS COMPLIANT, PLASTIC, MS-026, TQFP-100
文件页数: 16/20页
文件大小: 599K
代理商: CY7C09099V-6AXC
CY7C09079V/89V/99V
CY7C09179V/89V/99V
Document #: 38-06043 Rev. *E
Page 5 of 20
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.[10]
Storage Temperature ................................. –65
C to +150C
Ambient Temperature with Power Applied.. –55
C to +125C
Supply Voltage to Ground Potential................–0.5V to +4.6V
DC Voltage Applied to
Outputs in High Z State ........................... –0.5V to VCC+0.5V
DC Input Voltage ..................................... –0.5V to VCC+0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage............................................ >2001V
Latch-Up Current ..................................................... >200 mA
Operating Range
Range
Ambient
Temperature
VCC
Commercial
0
C to +70C
3.3V
300 mV
Industrial[11]
–40
C to +85C
3.3V
300 mV
Notes
10. The Voltage on any input or I/O pin cannot exceed the power pin during power-up.
11. Industrial parts are available in CY7C09099V and CY7C09199V only.
12. CEL and CER are internal signals. To select either the left or right port, both CE0 AND CE1 must be asserted to their active states (CE0 VIL and CE1 VIH).
Electrical Characteristics Over the Operating Range
Parameter
Description
CY7C09079V/89V/99V
CY7C09179V/89V/99V
Unit
-6[1]
-7[1]
-9
-12
Min
Ty
p
Max
Min
Ty
p
Max
Min
Ty
p
Max
Min
Ty
p
Max
VOH
Output HIGH Voltage (VCC = Min. IOH =
–4.0 mA)
2.4
V
VOL
Output LOW Voltage (VCC = Min. IOH =
+4.0 mA)
0.4
V
VIH
Input HIGH Voltage
2.0
V
VIL
Input LOW Voltage
0.8
V
IOZ
Output Leakage Current
–10
10
–10
10
–10
10 –10
10
A
ICC
Operating Current
(VCC= Max. IOUT = 0 mA)
Outputs Disabled
Commercial.
175 320
155
275
135 225
115 205 mA
Industrial[11]
275
390
185 295
mA
ISB1
Standby Current (Both
Ports TTL Level)[12] CEL
& CER VIH, f = fMAX
Commercial.
25
95
25
85
20
65
20
50
mA
Industrial[11]
85
120
35
75
mA
ISB2
Standby Current (One
Port TTL Level)[12] CEL |
CER VIH, f = fMAX
Commercial.
115
175
105
165
95
150
85
140 mA
Industrial[11]
165
210
105 160
mA
ISB3
Standby Current (Both
Ports CMOS Level)[12]
CEL & CER VCC – 0.2V,
f = 0
Commercial.
10
250
10
250
10
250
10
250
A
Industrial[11]
10
250
10
250
A
ISB4
Standby Current (One
Port CMOS Level)[12]
CEL | CER VIH, f = fMAX
Commercial
105 135
95
125
85
115
75
100 mA
Industrial[11]
125
170
95
125
mA
Capacitance
Parameter
Description
Test Conditions
Max
Unit
CIN
Input Capacitance
TA = 25C, f = 1 MHz,
VCC = 3.3V
10
pF
COUT
Output Capacitance
10
pF
相关PDF资料
PDF描述
CY7C09099V-7AI 3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM
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