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参数资料
| 型号： | CY7C09159AV-12AXC |
| 厂商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分类： | SRAM |
| 英文描述： | 3.3V 8K/16K x 9 Synchronous Dual Port Static RAM |
| 中文描述： | 8K X 9 DUAL-PORT SRAM, 25 ns, PQFP100 |
| 封装： | PLASTIC, LEAD FREE, TQFP-100 |
| 文件页数： | 12/16页 |
| 文件大小： | 526K |
| 代理商： | CY7C09159AV-12AXC |
CY7C09159AV
CY7C09169AV
Document #: 38-06053 Rev. *B
Page 5 of 16
Note:
6. CEL and CER are internal signals. To select either the left or right port, both CE0 AND CE1 must be asserted to their active states (CE0 ≤ VIL and CE1 ≥ VIH).
Electrical Characteristics Over the Operating Range
Parameter
Description
CY7C09159AV
CY7C09169AV
Unit
-9
-12
Min.
Typ.
Max.
Min.
Typ.
Max.
VOH
Output HIGH Voltage (VCC = Min., IOH = –4.0 mA)
2.4
V
VOL
Output LOW Voltage (VCC = Min., IOH = +4.0 mA)
0.4
V
VIH
Input HIGH Voltage
2.0
V
VIL
Input LOW Voltage
0.8
V
IOZ
Output Leakage Current
–10
10
–10
10
A
ICC
Operating Current (VCC = Max.,
IOUT = 0 mA) Outputs Disabled
Com’l.
135
230
115
180
mA
Ind.[5]
155
250
mA
ISB1
Standby Current (Both Ports TTL Level)[6]
CEL & CER ≥ VIH, f = fMAX
Com’l.
20
75
20
70
mA
Ind.[5]
30
80
mA
ISB2
Standby Current (One Port TTL Level)[6]
CEL | CER ≥ VIH, f = fMAX
Com’l.
95
155
85
140
mA
Ind.[5]
95
150
mA
ISB3
Standby Current (Both Ports CMOS Level)[6]
CEL & CER ≥ VCC – 0.2V, f = 0
Com’l.
10
500
10
500
A
Ind.[5]
10
500
A
ISB4
Standby Current (One Port CMOS Level)[6]
CEL | CER ≥ VIH, f = fMAX
Com’l.
85
115
75
100
mA
Ind.[5]
85
110
mA
Capacitance
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 3.3V
10
pF
COUT
Output Capacitance
10
pF
AC Test Loads
(a) Normal Load (Load 1)
R1 = 590
3.3V
OUTPUT
R2 = 435
C = 30 pF
VTH = 1.4V
OUTPUT
(b) Thévenin Equivalent (Load 1)
(c) Three-state Delay (Load 2)
3.3V
OUTPUT
RTH = 250
(Used for tCKLZ, tOLZ, & tOHZ
including scope and jig)
C = 30 pF
C = 5 pF
R1 = 590
R2 = 435
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CY7C09159AV-9AC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C09159AV-9AXC | 功能描述:静态随机存取存储器 3.3V 8Kx9 COM Sync Dual Port 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| CY7C09169AV-12AC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C09169AV-12AI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C09169AV-12AXC | 功能描述:IC SRAM 144KBIT 12NS 100LQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
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