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参数资料
| 型号： | CY7C1069AV33-10BAC |
| 厂商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分类： | SRAM |
| 英文描述： | 2M x 8 Static RAM |
| 中文描述： | 2M X 8 STANDARD SRAM, 10 ns, PBGA60 |
| 封装： | 8 X 20 MM, 1.20 MM HEIGHT, FBGA-60 |
| 文件页数： | 3/12页 |
| 文件大小： | 460K |
| 代理商： | CY7C1069AV33-10BAC |
CY7C1069AV33
Document #: 38-05255 Rev. *G
Page 11
Document History Page
Document Title: CY7C1069AV33 2M x 8 Static RAM
Document Number: 38-05255
REV.
ECN NO.
Submission
Date
Orig. of
Change
Description of Change
**
113724
03/27/02
NSL
New Data Sheet
*A
117060
07/31/02
DFP
Removed 15-ns bin
*B
117990
08/30/02
DFP
Added 8-ns bin
Changing ICC for 8, 10, 12 bins
tpower changed from 1 μs to 1 ms
Load Cap Comment changed (for Tx line load)
tSD changed to 5.5 ns for the 10-ns bin
Changed some 8-ns bin #'s (tHZ, tDOE, tDBE)
Removed hz < lz comments
*C
120385
11/13/02
DFP
Final Data Sheet
Added note 4 to “AC Test Loads and Waveforms” and note 7 to tpu and tpd
Updated Input/Output Caps (for 48BGA only) to 8 pf/10 pf and for the 54-pin
TSOP to 6/8 pf
*D
124441
2/25/03
MEG
Changed ISB1 from 100 mA to 70 mA
Shaded the 48fBGA product offering information
*E
403984
See ECN
NXR
Changed the Logic Block Diagram On page # 1
Added notes under Pin Configuration
Changed the Package diagram of 51-85162 from Rev *A to Rev *D
Changed 48-Ball FBGA to 60-Ball FBGA in Pin Configuration
Updated the Ordering Information
*F
492137
See ECN
NXR
Removed 8 ns speed bin from product offering
Changed the description of IIX from Input Load Current to Input Leakage
Current in DC Electrical Characteristics table
Updated the Ordering Information
*G
2784946
10/12/2009
VKN/PYRS Updated template
Corrected typo in footnote 9
Updated Ordering Information table
相关PDF资料 |
PDF描述 |
|---|---|
| CY7C1069AV33 | 2M x 8 Static RAM |
| CY7C109BL-15VC | 128K x 8 Static RAM |
| CY7C109BL-15VI | 128K x 8 Static RAM |
| CY7C109BL-15ZC | 128K x 8 Static RAM |
| CY7C1157V18-333BZC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CY7C1069AV33-10BAI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1069AV33-10ZC | 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| CY7C1069AV33-10ZXC | 功能描述:静态随机存取存储器 2M x 8 CPG COM Fast Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| CY7C1069AV33-10ZXCT | 功能描述:静态随机存取存储器 2M x 8 CPG COM Fast Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| CY7C1069AV33-10ZXI | 功能描述:静态随机存取存储器 2M x 8 CPG IND Fast Async 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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