参数资料
型号: DG636EN-T1-E4
厂商: Vishay Siliconix
文件页数: 11/14页
文件大小: 0K
描述: IC SWITCH DUAL SPDT 16-MINIQFN
标准包装: 1
功能: 开关
电路: 2 x SPDT
导通状态电阻: 170 欧姆
电压电源: 单/双电源
电压 - 电源,单路/双路(±): 2.7 V ~ 12 V,± 2.7 V ~ 5 V
电流 - 电源: -500nA,500nA
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 16-WFQFN
供应商设备封装: 16-迷你型QFN(1.8x2.6)
包装: 标准包装
其它名称: DG636EN-T1-E4DKR
www.vishay.com
6
Document Number: 69901
S10-1815-Rev. D, 02-Aug-10
Vishay Siliconix
DG636
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Dynamic Characteristics
Transition Time
tTRANS
VS(CLOSE) = 3.0 V, VS(OPEN) = 0.0 V,
RL = 300 , CL = 35 pF
Room
Full
95
130
190
130
160
ns
Enable Turn-On Time
tON(EN)
Room
Full
77
108
161
108
131
Enable Turn-Off Time
tOFF(EN)
Room
Full
35
76
112
76
88
Break-Before-Make-
Time
tBMM
Room
Full
45
55
Charge Injection
Q
CL = 1 nF, RGEN = 0 , VGEN = 0 V
Full
0.24
pC
Off-Isolatione
OIRR
f = 10 MHz, RL = 50 , CL = 5 pF
Room
- 57
dB
Crosstalke
XTALK
Room
- 93
Bandwidthe
BW
RL = 50
Room
442
MHz
Total Harmonic Distortion
THD
Signal = 1 VRMS, 20 Hz to 20 kHz,
RL = 600
Room
0.09
%
Source Off Capacitancee
CS(off)
f = 1 MHz
Room
2.5
pF
Drain Off Capacitancee
CD(off)
6.4
Channel On
Capacitancee
CD(on)
11.7
Power Supplies
Power Supply Current
I+
VIN = 0 V, or V+
Room
Full
0.001
0.5
1
0.5
1
A
Negative Supply Current
I-
Room
Full
- 0.001
- 0.5
- 1
- 0.5
- 1
Ground Current
IGND
Room
Full
- 0.001
- 0.5
- 1
- 0.5
- 1
SPECIFICATIONS FOR SINGLE SUPPLY
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, V- = 0 V
VIN A0, A1 and ENABLE = 1.4 V, 0.6 V
a
Temp.b
Typ.c
- 40 °C to + 125 °C - 40 °C to + 85 °C
Unit
Min.d
Max.d
Min.d
Max.d
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