参数资料
| 型号： | DG636EN-T1-E4 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 7/14页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH DUAL SPDT 16-MINIQFN |
| 标准包装： | 1 |
| 功能： | 开关 |
| 电路： | 2 x SPDT |
| 导通状态电阻： | 170 欧姆 |
| 电压电源： | 单/双电源 |
| 电压 - 电源，单路/双路(±)： | 2.7 V ~ 12 V，± 2.7 V ~ 5 V |
| 电流 - 电源： | -500nA，500nA |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-WFQFN |
| 供应商设备封装： | 16-迷你型QFN（1.8x2.6） |
| 包装： | 标准包装 |
| 其它名称： | DG636EN-T1-E4DKR |
www.vishay.com
2
Document Number: 69901
S10-1815-Rev. D, 02-Aug-10
Vishay Siliconix
DG636
Notes:
a. - 40 °C to 85 °C datasheet limits apply.
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 5.6 mW/°C above 70 °C.
d. Derate 6.6 mW/°C above 70 °C.
e. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal
is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be
guaranteed and is not required to ensure adequate bottom side solder interconnection.
TRUTH TABLE
Enable
Input
Selected Input
On Switches
A1
A0
DG636
L
X
All Switches Open
H
L
D1 to S1A, D2 to S2A
H
L
H
D1 to S1B, D2 to S2A
H
L
D1 to S1A, D2 to S2B
H
D1 to S1B, D2 to S2B
ORDERING INFORMATION
Temp. Range
Package
Part Number
- 40 °C to 125 °Ca
14 pin TSSOP
DG636EQ-T1-E3
16 pin miniQFN
DG636EN-T1-E4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Limit
Unit
V+ to V-
14
V
GND to V-
7
Digital Inputsa, VS, VD
(V-) - 0.3 to (V+) + 0.3
or 30 mA, whichever occurs first
Continuous Current (Any Terminal)
30
mA
Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle)
100
Storage Temperature
- 65 to 150
°C
Power Dissipation (Package)b
14 pin TSSOPc
450
mW
16 pin miniQFNd, e
525
Thermal Resistance (Package)b
14 pin TSSOP
178
°C/W
16 pin miniQFN
152
SPECIFICATIONS FOR DUAL SUPPLIES
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, V- = - 5 V
VIN A0, A1 and ENABLE = 2.0 V, 0.8 V
a
Temp.b
Typ.c
- 40 °C to 125 °C - 40 °C to 85 °C
Unit
Min.d
Max.d
Min.d
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Full
- 55- 55V
On-Resistance
RDS(on)
IS = 1 mA, VD = - 3 V, 0 V, + 3 V
Room
Full
70
115
160
115
140
On-Resistance Match
R
ON
IS = 1 mA, VD = ± 3 V
Room
Full
15
6.5
5
6.5
On-Resistance Flatness
RFLATNESS
IS = 1 mA, VD = - 3 V, 0 V, + 3 V
Room
Full
10
20
33
20
22
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DG636EQ-T1-E3 | 功能描述:模拟开关 IC Dual SPDT Switches RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
| DG63-B1A | 制造商:HRS 制造商全称:HRS 功能描述:Snap-Action Switches Insert molding terminals |
| DG63-B1AA | 制造商:HRS 制造商全称:HRS 功能描述:Snap-Action Switches Insert molding terminals |
| DG63-B2A | 制造商:HRS 制造商全称:HRS 功能描述:Snap-Action Switches Insert molding terminals |
| DG63-B2AA | 制造商:HRS 制造商全称:HRS 功能描述:Snap-Action Switches Insert molding terminals |
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