参数资料
| 型号： | DG636EN-T1-E4 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 8/14页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH DUAL SPDT 16-MINIQFN |
| 标准包装： | 1 |
| 功能： | 开关 |
| 电路： | 2 x SPDT |
| 导通状态电阻： | 170 欧姆 |
| 电压电源： | 单/双电源 |
| 电压 - 电源，单路/双路(±)： | 2.7 V ~ 12 V，± 2.7 V ~ 5 V |
| 电流 - 电源： | -500nA，500nA |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-WFQFN |
| 供应商设备封装： | 16-迷你型QFN（1.8x2.6） |
| 包装： | 标准包装 |
| 其它名称： | DG636EN-T1-E4DKR |
Document Number: 69901
S10-1815-Rev. D, 02-Aug-10
www.vishay.com
3
Vishay Siliconix
DG636
SPECIFICATIONS FOR DUAL SUPPLIES
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, V- = - 5 V
VIN A0, A1 and ENABLE = 2.0 V, 0.8 V
a
Temp.b
Typ.c
- 40 °C to 125 °C - 40 °C to 85 °C
Unit
Min.d
Max.d
Min.d
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Full
- 5
5
- 5
5
V
On-Resistance
RDS(on)
IS = 1 mA, VD = - 3 V, 0 V, + 3 V
Room
Full
70
115
160
115
140
On-Resistance Match
R
ON
IS = 1 mA, VD = ± 3 V
Room
Full
15
6.5
5
6.5
On-Resistance Flatness
RFLATNESS
IS = 1 mA, VD = - 3 V, 0 V, + 3 V
Room
Full
10
20
33
20
22
Switch Off
Leakage Current
(for 14 pin TSSOP)
IS(off)
V+ = 5.5 V, V- = - 5.5 V
VD = ± 4.5 V, VS = 4.5 V
Room
Full
± 0.01
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
nA
ID(off)
Room
Full
± 0.01
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
Channel On
Leakage Current
(for 14 pin TSSOP)
ID(on)
V+ = 5.5 V, V- = - 5.5 V,
VS = VD = ± 4.5 V
Room
Full
± 0.01
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
Switch Off
Leakage Current
(for 16 pin miniQFN)
IS(off)
V+ = 5.5 V, V- = - 5.5 V
VD = ± 4.5 V, VS = 4.5 V
Room
Full
± 0.01
- 1
- 18
1
18
- 1
- 2
1
2
ID(off)
Room
Full
± 0.01
- 1
- 18
1
18
- 1
- 2
1
2
Channel On
Leakage Current
(for 16 pin miniQFN)
ID(on)
V+ = 5.5 V, V- = - 5.5 V,
VS = VD = ± 4.5 V
Room
Full
± 0.01
- 1
- 18
1
18
- 1
- 2
1
2
Digital Control
Input Current, VIN Low
IIL
VIN A0, A1 and ENABLE
Under Test = 0.8 V
Full
0.005
- 0.1
0.1
- 0.1
0.1
A
Input Current, VIN High
IIH
VIN A0, A1 and ENABLE
Under Test = 2.0 V
Full
0.005
- 0.1
0.1
- 0.1
0.1
Input Capacitancee
CIN
f = 1 MHz
Room
3.4
pF
Dynamic Characteristics
Transition Time
tTRANS
VS(CLOSE) = 3 V, VS(OPEN) = 0.0 V,
RL = 300 , CL = 35 pF
Room
Full
20
70
105
70
80
ns
Turn-On Time
tON
RL = 300 , CL = 35 pF
VS = ± 3 V
Room
Full
16
60
90
60
65
Turn-Off Time
tOFF
Room
Full
15
52
76
52
56
Break-Before-Make
Time Delay
tD
VS = 3 V
RL = 300 , CL = 35 pF
Room
Full
15
55
Charge Injectione
Q
Vg = 0 V, Rg = 0 , CL = 1 nF
Room
0.1
pC
Off Isolatione
OIRR
RL = 50 , CL = 5 pF, f = 10 MHz
Room
- 58
dB
Bandwidthe
BW
RL = 50
Room
610
MHz
Channel-to-Channel
Crosstalke
XTALK
RL = 50 , CL = 5 pF, f = 10 MHz
Room
- 88
dB
Source Off Capacitancee
CS(off)
f = 1 MHz
Room
2.1
pF
Drain Off Capacitancee
CD(off)
Room
4.2
Channel On
Capacitancee
CD(on)
Room
11.3
Total Harmonic
Distortione
THD
Signal = 1 VRMS, 20 Hz to 20 kHz,
RL = 600
Room
0.01
%
±
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