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型号： DMC2990UDJ-7
厂商： Diodes Inc
文件页数： 3/9页
文件大小： 0K
描述： MOSFET N/P-CH 20V 450/310 SOT963
标准包装： 1
FET 型： N 和 P 沟道
FET 特点： 逻辑电平门
漏极至源极电压(Vdss)： 20V
电流 - 连续漏极(Id) @ 25° C： 450mA，310mA
开态Rds（最大）@ Id, Vgs @ 25° C： 990 毫欧 @ 100mA，4.5V
Id 时的 Vgs(th)（最大）： 1V @ 250µA
闸电荷(Qg) @ Vgs： 0.5nC @ 4.5V
输入电容 (Ciss) @ Vds： 27.6pF @ 15V
功率 - 最大： 350mW
安装类型： 表面贴装
封装/外壳： SOT-963
供应商设备封装： SOT-963
包装： 标准包装
其它名称： DMC2990UDJ-7DIDKR
DMC2990UDJ
Electrical Characteristics Q1 N-CHANNEL (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BV DSS
20
-
-
V
V GS = 0V, I D = 250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T C = +25°C
I DSS
I GSS
-
-
-
-
-
-
100
50
±100
nA
nA
V DS = 16V, V GS = 0V
V DS = 5V, V GS = 0V
V GS = ±5V, V DS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
V GS(th)
0.4
-
1.0
V
V DS = V GS , I D = 250 μ A
-
-
0.60
0.75
0.99
1.2
V GS = 4.5V, I D = 100mA
V GS = 2.5V, I D = 50mA
Static Drain-Source On-Resistance
R DS(ON)
-
0.90
1.8
?
V GS = 1.8V, I D = 20mA
-
-
1.2
2.0
2.4
-
V GS = 1.5V, I D = 10mA
V GS = 1.2V, I D = 1mA
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
180
-
850
0.6
-
1.0
mS
V
V DS = 5V, I D = 125mA
V GS = 0V, I S = 10mA
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R G
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
27.6
4.0
2.8
113
0.5
0.07
0.07
4.0
3.3
19.0
6.4
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
?
nC
nC
nC
ns
ns
ns
ns
V DS = 15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V GS = 4.5V, V DS = 10V,
I D = 250mA
V DD = 15V, V GS = 4.5V,
R L = 47 ? , R G = 2 ? ,
I D = 200mA
Electrical Characteristics Q2 P-CHANNEL (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BV DSS
-20
-
-
V
V GS = 0V, I D = -250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T C = +25°C
I DSS
I GSS
-
-
-
-
-
-
100
50
±100
nA
nA
V DS = -16V, V GS = 0V
V DS = -5V, V GS = 0V
V GS = ±5V, V DS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
V GS(th)
-0.4
-
-1.0
V
V DS = V GS , I D = -250 μ A
-
-
1.2
1.5
1.9
2.4
V GS = -4.5V, I D = -100mA
V GS = -2.5V, I D = -50mA
Static Drain-Source On-Resistance
R DS(ON)
-
2.1
3.4
?
V GS = -1.8V, I D = -20mA
-
-
2.5
4.0
5
-
V GS = -1.5V, I D = -10mA
V GS = -1.2V, I D = -1mA
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
100
-
450
-0.6
-
-1.0
mS
V
V DS = -5V, I D = -125mA
V GS = 0V, I S = -10mA
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R G
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
28.7
4.2
2.9
399
0.4
0.08
0.06
5.8
5.7
31.1
16.4
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
?
nC
nC
nC
ns
ns
ns
ns
V DS = -15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V GS = -4.5V, V DS =- 10V,
I D = -250mA
V DD = -15V, V GS = -4.5V,
R G = 2 ? , I D = -200mA
Notes:
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
3 of 9
www.diodes.com
March 2013
? Diodes Incorporated
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