参数资料
型号: DMC2990UDJ-7
厂商: Diodes Inc
文件页数: 4/9页
文件大小: 0K
描述: MOSFET N/P-CH 20V 450/310 SOT963
标准包装: 1
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 450mA,310mA
开态Rds(最大)@ Id, Vgs @ 25° C: 990 毫欧 @ 100mA,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 0.5nC @ 4.5V
输入电容 (Ciss) @ Vds: 27.6pF @ 15V
功率 - 最大: 350mW
安装类型: 表面贴装
封装/外壳: SOT-963
供应商设备封装: SOT-963
包装: 标准包装
其它名称: DMC2990UDJ-7DIDKR
DMC2990UDJ
Q1 N-CHANNEL
0.8
V GS = 4.5V
V GS =4.0V
0.8
T A = -55°C
0.6
0.4
V GS = 3.0V
V GS = 2.5V
V GS = 2.0V
0.6
0.4
T A = 25°C
T A = 85°C
T A = 125°C
T A = 150°C
V GS = 1.5V
0.2
0.2
0
0
V GS = 1.2V
0.5 1 1.5 2 2.5 3 3.5
V DS , DRAIN-SOURCE VOLTAGE (A)
Fig. 1 Typical Output Characteristics
4
0
0
V DS = 5.0V
0.5 1 1.5 2 2.5
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3
1.2
1.2
1.0
1.0
V GS = 4.5V
0.8
V GS = 1.8V
0.8
T A = 150°C
T A = 125°C
0.6
0.4
V GS = 2.5V
V GS = 4.5V
0.6
0.4
T A = 85°C
T A = 25°C
T A = -55°C
0.2
0 0.2 0.4 0.6 0.8
I D , DRAIN-SOURCE CURRENT
Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage
1.6
I D = 300mA
1.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0
I D DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance vs. Drain Current and Temperature
1.2
1.0
1.2
0.8
I D = 150mA
I D = 150mA
0.6
1.0
0.4
I D = 300mA
0.8
0.6
-50 -25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE( ? C)
Fig. 5 On-Resistance Variation with Temperature
0.2
0
-50 -25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE( ? C)
Fig. 6 On-Resistance Variation with Temperature
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
4 of 9
www.diodes.com
March 2013
? Diodes Incorporated
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