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参数资料
| 型号： | DMG1012UW-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 1A SOT323 |
| 产品变化通告： | Copper Bond Wire Change 3/May/2011 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 450 毫欧 @ 600mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.74nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 60.67pF @ 16V |
| 功率 - 最大： | 290mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SOT-323 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG1012UW-7DIDKR |
DMG1012UW
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
Terminals: Finish ? Matte Tin annealed over Alloy 42
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2KV
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
leadframe. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.006 grams (approximate)
Drain
D
Gate
ESD PROTECTED TO 2kV
TOP VIEW
Gate
Protection
Diode
Source
G
S
EQUIVALENT CIRCUIT
TOP VIEW
Ordering Information
(Note 4)
Part Number
DMG1012UW-7
Case
SOT-323
Packaging
3000 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
NA1
NA1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y? M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y? = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Chengdu A/T Site
Shanghai A/T Site
Year
Code
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMG1012UW
Document number: DS31859 Rev. 3 - 2
1 of 6
www.diodes.com
September 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMG1013T-7 | MOSFET P-CH SOT-523 |
| DMG1013UW-7 | MOSFET P-CH 20V 820MA SOT323 |
| DMG1016UDW-7 | MOSFET N+P 20V 1.07A SOT363 |
| DMG1016V-7 | MOSFET N+P 20V 870MA SOT563 |
| DMG1023UV-7 | MOSFET P-CH DUAL 20V SOT563 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMG1013T | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG1013T-7 | 功能描述:MOSFET MOSFET P-CHANNEL SOT-523 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG1013UW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG1013UW-7 | 功能描述:MOSFET P-Ch -20V VDSS Enchanced Mosfet RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG1016UDW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
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