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参数资料
| 型号： | DMG1013T-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH SOT-523 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 460mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 700 毫欧 @ 350mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.622nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 59.76pF @ 16V |
| 功率 - 最大： | 270mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-523 |
| 供应商设备封装： | SOT-523 |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMG1013T-7DIDKR |
DMG1013T
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
-20V
R DS(on)
700m Ω @ V GS = -4.5V
900m Ω @ V GS = -2.5V
1300m ? @ V GS = -1.8V
I D
T A = 25 ° C
-460mA
-420mA
-350mA
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3kV
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
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Qualified to AEC-Q101 standards for High Reliability
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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Case: SOT523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
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DC-DC Converters
Load switch
Power management functions
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Terminals: Finish ? Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.002 grams (approximate)
Drain
SOT523
D
Gate
Gate
Protection
Diode
Source
G
S
ESD PROTECTED TO 3kV
Top View
Equivalent Circuit
Top View
Ordering Information (Note 3)
Part Number
DMG1013T-7
Case
SOT523
Packaging
3000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
PA1 = Product Type Marking Code
PA1
YM
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
2015
C
2015
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMG1013T
Document number: DS31784 Rev. 5 - 2
1 of 6
www.diodes.com
March 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMG1013UW-7 | MOSFET P-CH 20V 820MA SOT323 |
| DMG1016UDW-7 | MOSFET N+P 20V 1.07A SOT363 |
| DMG1016V-7 | MOSFET N+P 20V 870MA SOT563 |
| DMG1023UV-7 | MOSFET P-CH DUAL 20V SOT563 |
| DMG1024UV-7 | MOSFET N-CH DUAL 20V SOT563 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMG1013UW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG1013UW-7 | 功能描述:MOSFET P-Ch -20V VDSS Enchanced Mosfet RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG1016UDW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
| DMG1016UDW-7 | 功能描述:MOSFET 20V Vdss 6V VGSS Complementary Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG1016V | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
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