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| 型号： | DMG1013T-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH SOT-523 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 460mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 700 毫欧 @ 350mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.622nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 59.76pF @ 16V |
| 功率 - 最大： | 270mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-523 |
| 供应商设备封装： | SOT-523 |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMG1013T-7DIDKR |
DMG1013T
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±6
Units
V
V
Drain Current (Note 4)
Pulsed Drain Current (Note 5)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
I DM
-0.46
-0.33
-6
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
0.27
461
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
-
-
-
-
-
-
-100
±2.0
V
nA
μ A
V GS = 0V, I D = -250 μ A
V DS = -20V, V GS = 0V
V GS = ±4.5V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
-0.5
-
-1.0
V
V DS = V GS , I D = -250 μ A
0.5
0.7
V GS = -4.5V, I D = -350mA
Static Drain-Source On-Resistance
R DS (ON)
-
0.7
0.9
Ω
V GS = -2.5V, I D = -300mA
1.0
1.3
V GS = -1.8V, I D = -150mA
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
-
0.9
-0.8
-
-1.2
S
V
V DS = -10V, I D = -250mA
V GS = 0V, I S = -150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
59.76
12.07
6.36
580
104
125
5.1
8.1
28.4
20.7
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
pC
pC
pC
ns
ns
ns
ns
V DS = -16V, V GS = 0V,
f = 1.0MHz
V GS = -4.5V, V DS = -10V,
I D = -250mA
V DD = -10V, V GS = -4.5V,
R L = 47 ? , R G = 10 ? ,
I D = -200mA
Notes:
4. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in
steady-state condition.
5. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10 μ s.
6. Measured under pulsed conditions to minimize self-heating effect. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
7. For design aid only, not subject to production testing.
DMG1013T
Document number: DS31784 Rev. 5 - 2
2 of 6
www.diodes.com
March 2012
? Diodes Incorporated
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