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| 型号： | DMG1016V-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N+P 20V 870MA SOT563 |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 870mA，640mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 400 毫欧 @ 600mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.74nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 60.67pF @ 16V |
| 功率 - 最大： | 530mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMG1016V-7DIDKR |
DMG1016V
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
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Low On-Resistance
Low Gate Threshold Voltage V GS(th) <1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
ESD Protected Gate to 2.5kV HBM
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 7
Ordering Information: See Page 7
Weight: 0.006 grams (approximate)
SOT-563
Q 1
D 1
S 1
G 2
G 1
S 2
D 2
Q 2
ESD PROTECTED TO 2.5kV HBM
TOP VIEW
BOTTOM VIEW
TOP VIEW
Internal Schematic
Maximum Ratings N-CHANNEL – Q 1
@T A = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
± 6
Unit
V
V
Drain Current (Note 1)
T A = 25°C
T A = 85°C
I D
870
630
mA
Maximum Ratings P-CHANNEL – Q 2
@T A = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
± 6
Unit
V
V
Drain Current (Note 1)
T A = 25°C
T A = 85°C
I D
-640
-460
mA
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB.
Symbol
P D
R θ JA
T J , T STG
Value
530
235
-55 to +150
Unit
mW
° C/W
° C
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMG1016V
Document number: DS31767 Rev. 3 - 2
1 of 8
www.diodes.com
May 2009
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMG1023UV-7 | MOSFET P-CH DUAL 20V SOT563 |
| DMG1024UV-7 | MOSFET N-CH DUAL 20V SOT563 |
| DMG1026UV-7 | MOSFET DL N-CH 60V 410MA SOT-563 |
| DMG1029SV-7 | MOSFET N/P-CH 60V 480/320 SOT563 |
| DMG2301U-7 | MOSFET P-CH 20V 2.5A SOT23 |
相关代理商/技术参数 |
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| DMG1023UV | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG1023UV-7 | 功能描述:MOSFET MOSFET P-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG1024UV | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG1024UV-7 | 功能描述:MOSFET MOSFET N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG1026UV | 制造商:Diodes Incorporated 功能描述:MOSFET NN CH W ESD 60V SOT563 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W ESD, 60V, SOT563 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W ESD, 60V, SOT563; Transistor Polarity:N Channel; Continuous Drain Current Id:410mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:580mW; No. of Pins:6 ;RoHS Compliant: Yes |
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