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| 型号： | DMG1016V-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N+P 20V 870MA SOT563 |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 870mA，640mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 400 毫欧 @ 600mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.74nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 60.67pF @ 16V |
| 功率 - 最大： | 530mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMG1016V-7DIDKR |
DMG1016V
Electrical Characteristics N-CHANNEL – Q 1
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
?
?
?
?
?
?
100
± 1.0
V
nA
μ A
V GS = 0V, I D = 250 μ A
V DS = 20V, V GS = 0V
V GS = ±4.5V, V DS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
V GS(th)
R DS (ON)
|Y fs |
V SD
0.5
?
?
?
?
?
?
0.3
0.4
0.5
1.4
0.7
1.0
0.4
0.5
0.7
?
1.2
V
Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 4.5V, I D = 600mA
V GS = 2.5V, I D = 500mA
V GS = 1.8V, I D = 350mA
V DS =10V, I D = 400mA
V GS = 0V, I S = 150mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
?
?
?
60.67
9.68
5.37
736.6
93.6
116.6
5.1
7.4
26.7
12.3
?
?
?
?
?
?
?
?
?
?
pF
pF
pF
pC
ns
V DS = 16V, V GS = 0V
f = 1.0MHz
V GS = 4.5V, V DS = 10V,
I D = 250mA
V DD = 10V, V GS = 4.5V,
R L = 47 Ω, R G = 10 Ω,
I D = 200mA
Electrical Characteristics P-CHANNEL – Q 2 @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
?
?
?
?
?
?
-100
± 2.0
V
nA
μ A
V GS = 0V, I D = -250 μ A
V DS = -20V, V GS = 0V
V GS = ±4.5V, V DS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V GS(th)
R DS (ON)
-0.5
?
?
0.5
0.7
-1.0
0.7
0.9
V
Ω
V DS = V GS , I D = -250 μ A
V GS = -4.5V, I D = -430mA
V GS = -2.5V, I D = -300mA
1.0
1.3
V GS = -1.8V, I D = -150mA
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
|Y fs |
V SD
?
?
-0.9
-0.8
?
-1.2
S
V
V DS =10V, I D = -250mA
V GS = 0V, I S = -150mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
?
?
?
59.76
12.07
6.36
622.4
100.3
132.2
5.1
8.1
28.4
20.7
?
?
?
?
?
?
?
?
?
?
pF
pF
pF
pC
ns
V DS = -16V, V GS = 0V
f = 1.0MHz
V GS = -4.5V, V DS = -10V,
I D = -250mA
V DD = -10V, V GS = -4.5V,
R L = 47 Ω, R G = 10 Ω,
I D = -200mA
Notes:
4. Short duration pulse test used to minimize self-heating effect.
DMG1016V
Document number: DS31767 Rev. 3 - 2
2 of 8
www.diodes.com
May 2009
? Diodes Incorporated
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