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| 型号： | DMG1024UV-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 20V SOT563 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.38A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 450 毫欧 @ 600mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.74nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 60.67pF @ 16V |
| 功率 - 最大： | 530mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG1024UV-7DIDKR |
DMG1024UV
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
-
-
-
-
-
-
100
±1.0
V
nA
μ A
V GS = 0V, I D = 250 μ A
V DS = 20V, V GS = 0V
V GS = ±4.5V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(th)
0.5
-
1.0
V
V DS = V GS , I D = 250 μ A
0.3
0.4
0.45
0.6
V GS = 4.5V, I D = 600mA
V GS = 2.5V, I D = 500mA
Static Drain-Source On-Resistance
R DS (ON)
-
0.5
0.75
Ω
V GS = 1.8V, I D = 350mA
-
-
9
10
V GS = 1.7V, I D = 140mA
V GS = 1.5V, I D = 100mA
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
-
1.4
0.7
-
1.2
S
V
V DS = 10V, I D = 400mA
V GS = 0V, I S = 150mA
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
60.67
9.68
5.37
736.6
93.6
116.6
5.1
7.4
26.7
12.3
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
pC
pC
pC
ns
ns
ns
ns
V DS = 16V, V GS = 0V,
f = 1.0MHz
V GS = 4.5V, V DS = 10V,
I D = 250mA
V DD = 10V, V GS = 4.5V,
R L = 47 ? , R G = 10 ? ,
I D = 200mA
Notes:
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
1.5
V GS = 8.0V
V GS = 4.5V
1.5
1.2
V GS = 3.0V
1.2
V DS = 5V
V GS = 2.5V
0.9
0.6
V GS = 2.0V
V GS = 1.5V
0.9
0.6
T A = 150°C
0.3
0.3
T A = 125°C
T A = 85°C
T A = 25°C
T A = -55°C
0
V GS = 1.2V
0
0
1 2 3 4
5
0
0.5 1 1.5 2 2.5
3
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DMG1024UV
Document number: DS31974 Rev. 5 - 2
2 of 6
www.diodes.com
April 2010
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMG1026UV-7 | MOSFET DL N-CH 60V 410MA SOT-563 |
| DMG1029SV-7 | MOSFET N/P-CH 60V 480/320 SOT563 |
| DMG2301U-7 | MOSFET P-CH 20V 2.5A SOT23 |
| DMG2302U-7 | MOSFET N-CH 20V 4.2A SOT23 |
| DMG2307L-7 | MOSFET P-CH 30V 2.5A SOT-23 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMG1026UV | 制造商:Diodes Incorporated 功能描述:MOSFET NN CH W ESD 60V SOT563 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W ESD, 60V, SOT563 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W ESD, 60V, SOT563; Transistor Polarity:N Channel; Continuous Drain Current Id:410mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:580mW; No. of Pins:6 ;RoHS Compliant: Yes |
| DMG1026UV-7 | 功能描述:MOSFET MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG1029SV-7 | 功能描述:MOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG-103L | 制造商:Alpha 3 Manufacturing 功能描述: |
| DMG-103LF | 制造商:Alpha 3 Manufacturing 功能描述: |
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