参数资料
型号: DMG2307L-7
厂商: Diodes Inc
文件页数: 1/6页
文件大小: 0K
描述: MOSFET P-CH 30V 2.5A SOT-23
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 2.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 90 毫欧 @ 2.5A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 8.2nC @ 10V
输入电容 (Ciss) @ Vds: 371.3pF @ 15V
功率 - 最大: 760mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23
包装: 标准包装
其它名称: DMG2307L-7DIDKR
DMG2307L
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
-30V
R DS(ON) max
90m ? @ V GS = -10V
134m ? @ V GS = -4.5V
I D max
T A = +25°C
-3.8A
-3.1A
?
?
?
?
?
?
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
?
?
Case: SOT-23
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
?
?
?
General Purpose Interfacing Switch
Power Management Functions
Load Switch for Portable Devices
?
?
?
?
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish ? Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.08 grams (approximate)
Ordering Information (Notes 4 & 5)
Part Number
DMG2307L-7
DMG2307LQ-7
Compliance
Standard
Automotive
Case
SOT-23
SOT-23
Packaging
3000Tape & Reel
3000Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4 . Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
G24 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Chengdu A/T Site
Shanghai A/T Site
Year
Code
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
2018
F
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMG2307L
Document number: DS35414 Rev. 3 – 2
1 of 6
www.diodes.com
November 2013
? Diodes Incorporated
相关PDF资料
PDF描述
DMG3414U-7 MOSFET N-CH 20V 4.2A SOT23
DMG3415U-7 MOSFET P-CH 20V 4A SOT-23
DMG3415UFY4-7 MOSFET P-CH 16V 2.5A DFN-3
DMG3420U-7 MOSFET N-CH 20V 5.47A SOT23
DMG4406LSS-13 MOSFET N CH 30V 10.3A SO-8
相关代理商/技术参数
参数描述
DMG263010R 功能描述:开关晶体管 - 偏压电阻器 COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
DMG263020R 功能描述:开关晶体管 - 偏压电阻器 COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
DMG264010R 功能描述:开关晶体管 - 偏压电阻器 COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
DMG264020R 功能描述:开关晶体管 - 偏压电阻器 COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
DMG264040R 功能描述:开关晶体管 - 偏压电阻器 COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel