- 您现在的位置：买卖IC网 > Datasheet目录404 > DMG2307L-7 (Diodes Inc)MOSFET P-CH 30V 2.5A SOT-23 Datasheet资料下载
参数资料
| 型号： | DMG2307L-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 2.5A SOT-23 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 371.3pF @ 15V |
| 功率 - 最大： | 760mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 标准包装 |
| 其它名称： | DMG2307L-7DIDKR |
DMG2307L
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-30
±20
Units
V
V
Continuous Drain Current (Note 6) V GS = -10V
Continuous Drain Current (Note 7) V GS = -10V
Continuous Drain Current (Note 7) V GS = -10V
Continuous Drain Current (Note 7) V GS = -4.5V
Pulsed Drain Current (Note 7)
Steady
State
Steady
State
t ≦ 10sec
Steady
State
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I D
I D
I DM
-2.5
-2.0
-3.8
-3.0
-4.6
-3.6
-3.1
-2.5
-20
A
A
A
A
A
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Total Power Dissipation (Note 7) t ≦ 10sec
Thermal Resistance, Junction to Ambient (Note 7) t ≦ 10sec
Operating and Storage Temperature Range
Symbol
P D
R θ JA
P D
R θ JA
P D
R θ JA
T J, T STG
Value
0.76
159
1.36
94
1.9
65.8
-55 to +150
Units
W
°C/W
W
°C/W
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV DSS
-30
–
–
V
V GS = 0V, I D = -250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T C = +25°C
I DSS
I GSS
–
–
–
–
-1.0
±100
μ A
nA
V DS = -30V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
V GS(th)
R DS (ON)
|Y fs |
V SD
-1.0
–
–
–
–
–
70
105
4.8
-0.75
-3.0
90
134
–
-1.0
V
m ?
S
V
V DS = V GS , I D = -250 μ A
V GS = -10V, I D = -2.5A
V GS = -4.5V, I D = -2.5A
V DS = -10V, I D = -2.5A
V GS = 0V, I S = -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = -4.5V)
Total Gate Charge (V GS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
–
–
–
–
–
–
–
–
–
–
–
–
371.3
51.3
45.9
17
4.0
8.2
0.9
1.2
4.8
7.3
22.4
13.4
–
–
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
?
nC
nC
nC
nC
ns
ns
ns
ns
V DS = -15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V,f = 1.0MHz
V GS = -10V, V DS = -15V,
I D = -3A
V DS = -15V, V GS = -10V,
R L = 15 ? , R G = 6 ? ,
I D = -1A
Notes:
6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMG2307L
Document number: DS35414 Rev. 3 – 2
2 of 6
www.diodes.com
November 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMG3414U-7 | MOSFET N-CH 20V 4.2A SOT23 |
| DMG3415U-7 | MOSFET P-CH 20V 4A SOT-23 |
| DMG3415UFY4-7 | MOSFET P-CH 16V 2.5A DFN-3 |
| DMG3420U-7 | MOSFET N-CH 20V 5.47A SOT23 |
| DMG4406LSS-13 | MOSFET N CH 30V 10.3A SO-8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMG263010R | 功能描述:开关晶体管 - 偏压电阻器 COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| DMG263020R | 功能描述:开关晶体管 - 偏压电阻器 COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| DMG264010R | 功能描述:开关晶体管 - 偏压电阻器 COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| DMG264020R | 功能描述:开关晶体管 - 偏压电阻器 COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| DMG264040R | 功能描述:开关晶体管 - 偏压电阻器 COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。