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| 型号： | DMG3415UFY4-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 16V 2.5A DFN-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 16V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 39 毫欧 @ 4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 281.9pF @ 10V |
| 功率 - 最大： | 490mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | DFN2015H4-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMG3415UFY4-7DIDKR |
DMG3415UFY4
P-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
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Low On-Resistance
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Case: DFN2015H4-3
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39m ? @ V GS = -4.5V
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Case Material: Molded Plastic, “Green” Molding Compound.
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? 52m ? @ V GS = -2.5V
? 65m ? @ V GS = -1.8V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
ESD Protected Up To 3kV
"Green" Device, Halogen and Antimony Free (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ? Matte Tin over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
S
D
G
ESD PROTECTED TO 3kV
TOP VIEW
BOTTOM VIEW
Internal Schematic
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-16
±8
Units
V
V
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Steady
State
T A = 25°C
T A = 70°C
I D
I DM
-2.5
-2.2
-12
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T A = 25°C
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
Symbol
P D
R θ JA
T J, T STG
Value
0.49
250.7
-55 to +150
Unit
W
°C/W
°C
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.
4. Repetitive rating, pulse width limited by junction temperature.
DMG3415UFY4
Document number: DS31842 Rev. 4 - 2
1 of 6
www.diodes.com
December 2009
? Diodes Incorporated
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相关代理商/技术参数 |
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| DMG3415UQ-7 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
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| DMG-400 | 制造商:Pro-Signal 功能描述:GOOSENECK MIC BARE ENDS 制造商:PRO SIGNAL 功能描述:GOOSENECK MIC, BARE ENDS 制造商:pro-power 功能描述:GOOSENECK MIC, BARE ENDS; Output Impedance:500ohm; Frequency Response Min:200Hz; Frequency Response Max:12kHz; Sensitivity:2.2mV/Pa/1kHz; Connector Type:3 Bare Wire Ends; Device Type:Gooseneck Microphone; External Diameter:28mm; |
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