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| 型号： | DMG3415UFY4-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 16V 2.5A DFN-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 16V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 39 毫欧 @ 4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 281.9pF @ 10V |
| 功率 - 最大： | 490mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | DFN2015H4-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMG3415UFY4-7DIDKR |
DMG3415UFY4
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV DSS
-16
?
?
V
V GS = 0V, I D = -250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
T J = 25 ° C
I DSS
I GSS
?
?
?
?
-1.0
±10
±500
μ A
μ A
nA
V DS = -16V, V GS = 0V
V GS = ± 8V, V DS = 0V
V GS = ± 5V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(th)
-0.3
-0.55
-1.0
V
V DS = V GS , I D = -250 μ A
31
39
V GS = -4.5V, I D = -4.0A
Static Drain-Source On-Resistance
R DS (ON)
?
40
52
m ?
V GS = -2.5V, I D = -3.5A
51
65
V GS = -1.8V, I D = -2.0A
Forward Transfer Admittance
|Y fs |
?
7.9
?
S
V DS = -5V, I D = -2.5A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
C iss
C oss
C rss
R g
?
?
?
?
281.9
152.0
37.9
250
?
?
?
?
pF
pF
pF
?
V DS = -10V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 6)
Total Gate Charge
Q g
?
10
?
nC
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
1.5
2.4
79.0
175.2
884.5
568
?
?
?
?
?
?
nC
nC
ns
ns
ns
ns
V GS = -4.5V, V DS = -10V, I D = -4A
V DS = -10V, V GS = -4.5V,
R D = 2.5 Ω , R G = 3.0 Ω
Notes:
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
20
V GS = 4.5 V
V GS = 3.5V
V GS = 3.0V
20
16
V GS = 2.5V
16
V DS = 5V
V GS = 2.0V
12
8
V GS = 1.5V
12
8
4
4
T A = 150°C
T A = 125°C
T A = 85°C
T A = 25°C
0
0
T A = -55°C
0
1
2 3 4
5
0.5
1 1.5 2
2.5
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
DMG3415UFY4
Document number: DS31842 Rev. 4 - 2
2 of 6
www.diodes.com
December 2009
? Diodes Incorporated
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