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参数资料
| 型号： | DMG3415U-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 4A SOT-23 |
| 产品目录绘图： | SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 39 毫欧 @ 4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9.1nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 294pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG3415UDIDKR |
DMG3415U
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V (BR)DSS
-20V
R DS(on) max
42.5m ? @ V GS = -4.5V
71m ? @ V GS = -1.8V
I D
T A = +25°C
-4.0A
-2.0A
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?
?
?
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
?
?
ESD Protected Up To 3kV
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Description
?
?
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(ON) ) and yet maintain superior switching
Mechanical Data
performance, making it ideal for high efficiency power management
applications.
Applications
? DC-DC Converters
? Power management functions
?
?
?
?
?
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?
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Case: SOT23
Case Mate rial: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ? Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
D ra in
SOT23
D
G a te
ESD PROTECTED TO 3kV
G
S
G a te
P ro te c tio n
D io d e
S o u rce
Ordering Information (Note 4)
Top View
Top View
Internal Schematic
Equivalent Circuit
Part Number
DMG3415U-7
DMG3415UQ-7
DMG3415U-13
Compliance
Standard
Automotive
Standard
Case
SOT23
SOT23
SOT23
Packaging
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definit ions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony- free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
34P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Date Code Key
34P
Chengdu A/T Site
Shanghai A/T Site
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Year
Code
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMG3415U
Document number: DS31735 Rev. 11 - 2
1 of 6
www.diodes.com
February 2014
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMG3415UFY4-7 | MOSFET P-CH 16V 2.5A DFN-3 |
| DMG3420U-7 | MOSFET N-CH 20V 5.47A SOT23 |
| DMG4406LSS-13 | MOSFET N CH 30V 10.3A SO-8 |
| DMG4413LSS-13 | MOSFET P-CH 30V 10.5A SOP8L |
| DMG4435SSS-13 | MOSFET P-CH 30V 7.3A 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMG3415U-7-CUT TAPE | 制造商:DIODES 功能描述:DMG3415U Series 20 V 39 mOhm P-Channel Enhancement Mode Mosfet - SOT-23-3 |
| DMG3415UFY4 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG3415UFY4-7 | 功能描述:MOSFET MOSFET P-CHAN. RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG3415UQ-7 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG3420U | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
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